StrongIRFET
IRFS7430PbF
IRFSL7430PbF
HEXFET
®
Power MOSFET
Applications
l
Brushed motor drive applications
l
BLDC motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC inverters
Benefits
l
Improved gate, avalanche and dynamic dV/dt
ruggedness
l
Fully characterized capacitance and avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt capability
l
Lead-free
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
40V
0.97m
1.2m
426A
:
:
c
195A
D
S
G
G
D
S
D
2
Pak
IRFS7430PbF
TO-262
IRFSL7430PbF
D
S
G
Gate
Drain
Source
Base Part Number
IRFSL7430PbF
IRFS7430PbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFSL7430PbF
IRFS7430PbF
IRFS7430TRLPbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
6.0
ID = 100A
500
Limited By Package
400
4.0
ID, Drain Current (A)
18
20
300
T J = 125°C
2.0
200
100
T J = 25°C
0.0
4
6
8
10
12
14
16
0
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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Fig 2.
Maximum Drain Current vs. Case Temperature
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November 19, 2013
IRFS/SL7430PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Single Pulse Avalanche Energy
Max.
426
301
195
1524
Units
A
d
375
2.5
± 20
-55 to + 175
300
760
1360
See Fig. 15, 16, 22a, 22b
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Ãd
k
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
d
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady-state)
j
Parameter
Typ.
Max.
0.40
40
Units
°C/W
l
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
0.014
0.97
1.2
–––
–––
–––
–––
–––
2.1
–––
–––
1.2
–––
3.9
1.0
150
100
-100
–––
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Typ. Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1.0mA
mΩ V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250µA
V
µA V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
Ω
g
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.15mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
990A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C..
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.15mH, R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
2
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November 19, 2013
IRFS/SL7430PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
300
77
98
202
32
105
160
100
14240
2130
1460
2605
2920
–––
460
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.86
2.7
52
52
97
97
2.3
426
Conditions
MOSFET symbol
showing the
integral reverse
G
D
A
A
Ãd
1524
1.2
–––
–––
–––
–––
–––
–––
f
Reverse Recovery Charge
Reverse Recovery Current
S
p-n junction diode.
V T
J
= 25°C, I
S
= 100A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
ns T
J
= 25°C
V
R
= 34V,
I
F
= 100A
T
J
= 125°C
di/dt = 100A/µs
nC T
J
= 25°C
T
J
= 125°C
A T
J
= 25°C
g
g
3
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November 19, 2013
IRFS/SL7430PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
10
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 100A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 25°C
10
TJ = 175°C
VDS = 25V
≤60µs
PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
Ciss
10000
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
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November 19, 2013
IRFS/SL7430PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
100
ISD, Reverse Drain Current (A)
100
T J = 175°C
ID, Drain-to-Source Current (A)
1000
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
0.1
10
100
VDS, Drain-toSource Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
47
Id = 1.0mA
46
45
44
43
42
Energy (µJ)
Fig 10.
Maximum Safe Operating Area
2.5
VDS= 0V to 32V
2.0
1.5
1.0
0.5
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
0
5
10
15
20
25
30
35
40
45
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( mΩ)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
6.0
VGS = 5.5V
VGS = 6.0V
4.0
VGS = 7.0V
VGS = 8.0V
VGS =10V
2.0
0.0
0
200
400
600
800
1000
1200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2013 International Rectifier
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November 19, 2013
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