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IRLHS6342

Description
Small PowIR MOSFETs
Categorysemiconductor    Discrete semiconductor   
File Size261KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRLHS6342 Overview

Small PowIR MOSFETs

IRLHS6342PbF
HEXFET
®
Power MOSFET
V
DS
V
GS
R
DS(on) max
(@V
GS
= 4.5V)
30
±12
15.5
11
12
V
V
nC
A
D 1
TOP VIEW
6 D
D
D
D
D
Q
g (typical)
I
D
(@T
C (Bottom)
= 25°C)
D 2
S
D
5 D
G
i
G 3
4 S
D
S
S
2mm x 2mm PQFN
Applications
Charge and discharge switch for battery application
System/Load Switch
Features and Benefits
Features
Low R
DSon
(≤ 15.5mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 0.9 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
results in
Orderable part number
IRLHS6342TRPbF
IRLHS6342TR2PbF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
Tape and Reel
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Wirebond Limited)
Pulsed Drain Current
Power Dissipation
g
Power Dissipation
g
Max.
30
±12
8.7
6.9
19
Units
V
c
hi
15
hi
12
i
76
2.1
1.3
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
0.02
-55 to + 150
Storage Temperature Range
Notes

through
‡
are on page 2
1
www.irf.com
©
2013 International Rectifier
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