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2SJ196

Description
Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size3MB,226 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SJ196 Overview

Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ196 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresGATE PROTECTED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
C
&
C
for Human Potential
Microcomputer
1
SEMICONDUCTOR
SELECTION GUIDE
GUIDE
BOOK
IC Memory
2
Semi-Custom IC
3
Particular Purpose IC
4
General Purpose Linear IC
5
Transistor / Diode / Thyristor
6
Microwave Device / Consumer Use High Frequency Device
7
Optical Device
8
Packages
9
Index (Quick Reference by Type Number)
10
Oct. 1995
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hui_h_mail Embedded System

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