datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> diode> BYV25G-600,127
PDF
Preview

BYV25G-600,127

Description
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, TO-262AA, I2PAK-3
CategoryDiscrete semiconductor    diode   
File Size237KB，12 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
Download Datasheet Parametric View All

BYV25G-600,127 Overview

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, TO-262AA, I2PAK-3

BYV25G-600,127 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerWeEn Semiconductors
package instructionI2PAK-3
Reach Compliance Codenot_compliant
Factory Lead Time1 week
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Maximum non-repetitive peak forward current66 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
GuidelineIEC-60134
Maximum repetitive peak reverse voltage600 V
Maximum reverse current50 µA
Maximum reverse recovery time0.06 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

BYV25G-600,127 Preview

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV25G-600
Ultrafast rectifier diode
Rev. 01 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package.
1.2 Features and benefits
Fast switching
High thermal cycling performance
Low forward voltage drop
Low profile package facilitates
compact/slim designs
Low switching losses
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
High frequency switched-mode power
supplies
1.4 Quick reference data
Table 1.
V
RRM
I
F(AV)
Quick reference
Conditions
Min
-
square-wave pulse;
δ
= 0.5;
T
mb
≤
135 °C; see
Figure 1
and
2
I
F
= 1 A; V
R
≥
30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 5
-
Typ
-
-
Max
600
5
Unit
V
A
repetitive peak reverse
voltage
average forward current
Symbol Parameter
Dynamic characteristics
t
rr
reverse recovery time
-
50
60
ns
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
n.c.
K
A
K
Description
not connected
cathode
anode
mounting base; cathode
1
2
3
003aad550
Simplified outline
Graphic symbol
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV25G-600
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226A
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward
current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
T
mb
≤
100 °C; DC
square-wave pulse;
δ
= 0.5; T
mb
≤
135 °C; see
Figure 1
and
2
square-wave pulse;
δ
= 0.5; T
mb
≤
135 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
600
600
600
5
10
66
60
150
150
Unit
V
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
2 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
10
P
tot
(W)
003aac347
8
P
tot
(W)
003aac348
δ
=1
8
6
6
0.2
4
0.1
0.5
a = 1.57
1.9
2.2
2.8
4.0
4
2
2
0
0
2
4
6
I
F(AV)
(A)
0
8
0
2
4
I
F(AV)
(A)
6
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
3 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient free air
Conditions
with heatsink compound;
see
Figure 3
Min
-
-
Typ
-
60
Max
2.5
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
4 of 11
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

This application circuit of LM135-235-335

8-bit bipolar DA converter that generates sine waves

Bistable counting control trigger circuit

6N138/6N139 type optical coupler/optical isolator circuit-schematic diagram

555 electronic Christmas tree circuit

Multifunctional high-precision ramp oscillator

DVD capacity problem
Does anyone know what the capacity of single-sided double-layer and double-sided single-layer DVDs is?...
fangzheng Integrated technical exchanges
mgtt_o.dll error under WINCE
Please help me: I am compiling the wince kernel and downloading it to the board. Sometimes the system boots up normally, but sometimes all Chinese characters are gone, and sometimes only some Chinese ...
xheshui Embedded System
Principle and development of programmable analog devices
[b]Abstract: [/b]Introduces the basic principles and development process of programmable analog devices. Lists the mainstream device series and explains their core technologies. Prospects for the deve...
maker FPGA/CPLD
Want to make a low power board, verification solution
Share group purchase link TI MSP-EXP430FR5739 Experimenter Board Kit https://www.eeworld.com.cn/eetuan/20111115/index.php...
cobraforyou Microcontroller MCU
Why does a web page that runs normally on XP display garbled characters on ARM?
RT, the website I made also uses GB2312 encoding. It runs normally on XP, but when it is run on an ARM board, it is garbled. Every time I have to manually adjust the web page encoding to GB2312 before...
asinc ARM Technology
【E840-DTU】Evaluation Summary
[i=s]This post was last edited by lugl4313820 on 2022-11-5 08:26[/i]【E840-DTU】MQTT——ONENET - RF/Wireless - Electronic Engineering World - Forum (eeworld.com.cn) 【E840-DTU】MQTT sending and receiving te...
lugl4313820 RF/Wirelessly
Shortcut:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components

  1. MS27473T16F42AB
  2. TMM-120-01-FM-S-RA-006
  3. RPC25126.2M10%A
  4. TRU050TBLNA25.248
  5. HDM1/44301%T
  6. SL2-054-UH184/06-88
  7. SSN08A4222JP7
  8. D20NU3R9M1MBD
  9. 1.5SMCJ13C-AU-R1-10001
  10. D2541HB-14P-WH-G30
  11. C3962WV-5P-A-2-YL
  12. TC0325D2103T5E

Popular Articles

  1. MicroPython LPC1788 porting
  2. Pioneer Semiconductor: HPM6000 series RISC-V general-purpose MCU products fill the gap in domestic high-end MCUs
  3. SECORA™ ID supports FIDO applications as a solution for online identity verification
  4. Samsung Galaxy S21 FE sneak preview at Walmart in the US
  5. Share tiny4412, emmc burning u-boot, support fastboot mode burning emmc
  6. Syndion® GP: Enabling the future of advanced power devices
  7. AVR MCU-nRF24L01 sending and receiving program
  8. It was revealed that a company purchased 650,000 Xiaomi 12 mobile phones in batches, worth more than 2 billion
  9. When will the WiFi7 router be available? Qualcomm and ZTE are making efforts
  10. Oscilloscope measurement method for repairing motherboard

Technical ResourceMore

  1. CN201510482294-LED constant current drive circuit and control method thereof
  2. RSD pulse power supply using resonance triggering method
  3. Key points of logic synthesis (Design Compiler)
  4. Infrared tracking circuit diagram
  5. usb debugging assistant version 1.2.rar
  6. MATLAB Case 11 Optimization of Continuous Hopfield Neural Network - Traveling Salesman Problem Optimization Calculation.rar
  7. LLC Half-bridge Resonant Inductor Design
  8. 精密數位類比轉換器
  9. Practical C language programming for MSP430 series microcontrollers
  10. 台达厂鋼板制作通用規範

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1798  1774  810  2872  718  37  36  17  58  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号