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TIP101BA

Description
8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size409KB,61 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

TIP101BA Overview

8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

TIP101BA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)200
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105
VCEO(sus)
= 80 Vdc (Min) — TIP101, TIP106
VCEO(sus)
= 100 Vdc (Min) — TIP102, TIP107
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat)
= 2.5 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
TO–220AB Compact Package
TIP100
TIP101*
TIP102*
TIP105
TIP106*
TIP107*
*Motorola Preferred Device
NPN
PNP
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCB
VEB
IC
IB
PD
E
TIP100,
TIP105
60
60
TIP101,
TIP106
80
80
TIP102,
TIP107
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
8.0
15
1.0
Collector Current — Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Unclamped Inductive Load Energy (1)
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
80
0.64
30
Watts
W/
_
C
mJ
Watts
W/
_
C
PD
2.0
0.016
TJ, Tstg
– 65 to + 150
*MAXIMUM RATINGS
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
80 WATTS
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
R
θJA
Max
Unit
Thermal Resistance, Junction to Case
1.56
62.5
_
C/W
_
C/W
Thermal Resistance, Junction to Ambient
TA TC
4.0 80
CASE 221A–06
TO–220AB
(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100
Ω.
3.0 60
TC
2.0 40
1.0 20
TA
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola Bipolar Power Transistor Device Data
3–891
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