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Datasheet> All Categories > Discrete semiconductor> The transistor> FMH13N60ES
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FMH13N60ES

Description
Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), SC-65, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size589KB，5 Pages
ManufacturerFuji Electric Co., Ltd.
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FMH13N60ES Overview

Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), SC-65, 3 PIN

FMH13N60ES Parametric

Parameter NameAttribute value
MakerFuji Electric Co., Ltd.
Parts packaging codeTO-3P(Q
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresLOW NOISE
Avalanche Energy Efficiency Rating (Eas)471.5 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)13 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.58 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)195 W
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

FMH13N60ES Preview

Super FAP-E
3S
series
Features
FMH13N60ES
Outline Drawings [mm]
TO-3P(Q)
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower R
DS
(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller V
GS
ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Drain(D)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
E
AR
dV/dt
-di/dt
P
D
T
ch
T
stg
Characteristics
600
600
±13
±52
±30
13
471.5
19.5
4.7
100
2.50
195
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
V
GS
= -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS
(th)
I
DSS
I
GSS
R
DS
(on)
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
G
Q
GS
Q
GD
Q
SW
I
AV
V
SD
trr
Qrr
Conditions
I
D
=250µA, V
GS
=0V
I
D
=250µA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
I
D
=6.5A, V
GS
=10V
I
D
=6.5A, V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
cc
=300V
V
GS
=10V
I
D
=6.5A
R
G
=18Ω
V
cc
=300V
I
D
=13A
V
GS
=10V
L=2.36mH, T
ch
=25°C
I
F
=13A, V
GS
=0V, T
ch
=25°C
I
F
=13A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
min.
600
3.7
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
-
13
-
-
-
typ.
-
4.2
-
-
10
0.50
10
1700
190
10
38
24
86
16
48
16
16
7
-
0.90
0.7
8
max.
-
4.7
25
250
100
0.58
-
2550
285
15
57
36
129
24
72
24
24
10.5
-
1.08
-
-
Unit
V
V
µA
nA
Ω
S
pF
T
ch
=25°C
T
ch
=125°C
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to case
Channel to ambient
min.
typ.
max.
0.640
50.0
Unit
°C/W
°C/W
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
AS
=6A, L=24.0mH, Vcc=60V, R
G
=50Ω
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I
F
≤-I
D
, -di/dt=100A/µs, Vcc≤BV
DSS
, Tch≤150°C.
Note *5 : I
F
≤-I
D
, dv/dt=4.7kV/µs, Vcc≤BV
DSS
, Tch≤150°C.
1
FMH13N60ES
Allowable Power Dissipation
PD=f(Tc)
Safe Operating Area
I
D
=f(V
DS
):Duty=0(Single pulse),Tc=25
°
c
10
2
FUJI POWER MOSFET
300
t=
1
µ
s
250
10
µ
s
10
1
200
100
µ
s
PD [W]
100
ID [A]
150
10
0
1ms
10
50
-1
Power loss waveform :
Square waveform
P
D
t
0
0
25
50
75
Tc [
°
C]
100
125
150
10
-2
10
0
10
1
VDS [V]
10
2
10
3
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
30
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
25
10V
8.0V
7.5V
10
20
ID [A]
15
7.0V
ID[A]
1
10
6.5V
5
VGS=6.0V
0.1
0
0
4
8
12
VDS [V]
16
20
24
0
2
4
6
VGS[V]
8
10
12
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
1.0
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=6.0V
6.5V
7V
0.9
0.8
10
RDS(on) [
Ω
]
8V 10V
20V
0.7
gfs [S]
0.6
1
0.5
0.4
0.1
0.1
1
ID [A]
10
100
0.3
0
5
10
15
ID [A]
20
25
30
2
FMH13N60ES
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
FUJI POWER MOSFET
2.0
1.8
1.6
1.4
RDS(on) [
Ω
]
8
7
6
5
4
3
2
1
0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
max.
typ.
VGS(th) [V]
max.
typ.
min.
-50
-25
0
25
50
75
Tch [
°
C]
100
125
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=13A,Tch=25
°
C
14
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
12
10
Vcc= 120V
300V
480V
10
4
10
VGS [V]
C [pF]
3
Ciss
8
6
10
2
Coss
4
10
1
2
Crss
10
0
0
0
20
40
Qg [nC]
60
80
100
10
-2
10
-1
10
0
10
1
10
2
VDS [V]
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=18
Ω
10
10
2
td(off)
tf
IF [A]
td(on)
t [ns]
tr
1
10
1
0.1
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
10
0
10
-1
10
0
ID [A]
10
1
10
2
3
FMH13N60ES
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=13A
10
FUJI POWER MOSFET
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
1
700
600
10
0
500
Zth(ch-c) [
°
C/W]
I
AS
=6A
EAV [mJ]
400
10
-1
I
AS
=8A
300
I
AS
=13A
10
-2
200
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
0
0
25
50
75
starting Tch [
°
C]
100
125
150
4
FMH13N60ES
FUJI POWER MOSFET
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
• Measurement equipment
• Industrial robots etc.
5
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