datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> FQPF18N50V2SDTU
PDF
Preview

FQPF18N50V2SDTU

Description
18A, 500V, 0.265ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size2MB，13 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric Compare View All

FQPF18N50V2SDTU Online Shopping

Suppliers Part Number Price MOQ In stock  
FQPF18N50V2SDTU - - View Buy Now

FQPF18N50V2SDTU Overview

18A, 500V, 0.265ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN

FQPF18N50V2SDTU Parametric

Parameter NameAttribute value
MakerRochester Electronics
Parts packaging codeTO-220F
package instructionLEAD FREE, TO-220F, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)330 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.265 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)72 A
Certification statusCOMMERCIAL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

FQPF18N50V2SDTU Preview

D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
QFET
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
Features
• 550V @T
J
= 150°C
• Typ. R
DS(on)
= 0.265Ω @V
GS
= 10 V
• Low gate charge (typical 42 nC)
• Low Crss (typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies, active power factor correc-
tion, electronic lamp ballast based on half bridge topology.
D
●
◀
G
G DS
▲
●
●
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQP18N50V2
18
12.1
72
FQPF18N50V2
500
18*
12.1*
72*
±
30
330
18
25
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
208
1.67
-55 to +150
300
69
0.55
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP18N50V2/FQPF18N50V2 Rev. D
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
PV218N50
PFV218N50
Device
FQP18N50V2
FQPF18N50V2
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
500
--
--
--
--
--
--
0.5
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 9 A
V
DS
= 40 V, I
D
= 9 A
(Note 4)
3.0
--
--
--
0.225
16
5.0
0.265
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 400 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 400 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
2530
300
11
76
150
3290
390
14.3
--
--
pF
pF
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400 V, I
D
= 18 A,
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
V
DD
= 250 V, I
D
= 18 A,
R
G
= 25
Ω
--
--
--
--
--
--
--
40
150
95
110
42
12
14
90
310
200
230
55
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
18A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 18 A
V
GS
= 0 V, I
S
= 18 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
420
5.4
18
72
1.4
--
--
A
A
V
ns
µC
FQP18N50V2/FQPF18N50V2 Rev. D
2
www.fairchildsemi.com
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
1
Figure 2. Transfer Characteristics
I
D
, Drain Current [A]
10
7.0 V
6.5 V
6.0 V
Bottom :
5.5 V
I
D
, Drain Current [A]
10
1
150
℃
25
℃
10
0
10
0
-55
℃
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
-1
10
※
Notes :
1. V
DS
= 40V
2. 250µs Pulse Test
10
-1
10
0
10
1
10
-1
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.0
Drain-Source On-Resistance
0.8
I
DR
, Reverse Drain Current [A]
R
DS(ON)
[Ω ],
10
1
0.6
V
GS
= 10V
0.4
V
GS
= 20V
0.2
※
Note : T
J
= 25
℃
10
0
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
0.0
0
10
20
30
40
50
60
70
10
-1
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
, Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
7000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
Figure 6. Gate Charge Characteristics
12
V
GS
, Gate-Source Voltage [V]
6000
5000
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 100V
10
V
DS
= 250V
V
DS
= 400V
Capacitance [pF]
8
4000
3000
2000
1000
6
C
iss
C
oss
※
Notes :
4
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= 18A
C
rss
0
-1
10
10
0
10
1
0
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQP18N50V2/FQPF18N50V2 Rev. D
3
www.fairchildsemi.com
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
R
DS(ON)
, (Normalized)
2.0
1.0
1.5
1.0
※
Notes :
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
0.5
1. V
GS
= 10 V
2. I
D
= 9 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
for FQP18N50V2
Figure 9-2. Maximum Safe Operating Area
for FQPF18N50V2
Operation in This Area
Operation in This Area
10
2
is Limited by R
DS(on)
10
2
is Limited by R
DS(on)
I
D
, D rain C urrent [A]
I
D
, Drain Current [A]
100 us
10
1
100 us
10
1
1 ms
10 ms
DC
1 ms
10 ms
100 ms
DC
10
0
※
Notes :
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
20
I
D
, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
FQP18N50V2/FQPF18N50V2 Rev. D
4
www.fairchildsemi.com
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

FQPF18N50V2SDTU Related Products

FQPF18N50V2SDTU FQPF18N50V2 FQP18N50V2
Description 18A, 500V, 0.265ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN 18A, 500V, 0.265ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN 18A, 500V, 0.265ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Maker Rochester Electronics Rochester Electronics Rochester Electronics
Parts packaging code TO-220F TO-220F TO-220AB
package instruction LEAD FREE, TO-220F, 3 PIN LEAD FREE, TO-220F, 3 PIN TO-220, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Avalanche Energy Efficiency Rating (Eas) 330 mJ 330 mJ 330 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V 500 V
Maximum drain current (ID) 18 A 18 A 18 A
Maximum drain-source on-resistance 0.265 Ω 0.265 Ω 0.265 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 72 A 72 A 72 A
Certification status COMMERCIAL COMMERCIAL COMMERCIAL
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Shell connection ISOLATED ISOLATED -
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
JESD-609 code - e3 e3
Humidity sensitivity level - NOT APPLICABLE NOT APPLICABLE
Peak Reflow Temperature (Celsius) - NOT APPLICABLE NOT APPLICABLE
Terminal surface - MATTE TIN MATTE TIN
Maximum time at peak reflow temperature - NOT APPLICABLE NOT APPLICABLE

Recommended Resources

Two-wire circuit diagram

High-efficiency regulated power supply schematic diagram

Plot motor microcomputer protector

Stronger than light circuit

Piano tone forming circuit

TA7252P power amplifier circuit

i.MX25 ADC
i.MX25 is a Freescale ARM9 processor with a 400MHZ main frequency and a DDR2 controller. It is designed for the industrial market and is similar to TI's AM18xx and atmel's. This is a good choice for i...
bluehacker NXP MCU
There seems to be a problem with the forum recently.
Unstable, resources cannot be uploaded. Sometimes when the upload interface appears, the username is not yours!! And no resource has been uploaded successfully. Although it is prompted to be successfu...
stronghui Embedded System
【Silicon Labs Development Kit Review】+ Unboxing Review
[i=s]This post was last edited by YangTwo on 2021-7-23 15:38[/i]Today I received the PG22 board sent by the moderator. It is very beautiful and I would like to share it with you. First of all, the red...
YangTwo Development Kits Review Area
About single chip microcomputer controlled stepper motor!!
I'm working on a stepper motor recently and want to use a single-chip microcomputer to control it. However, the stepper motor is relatively large and the drive current is over 2A. Could any experts pl...
fjw10245 Embedded System
TI CC2540 SBL Upgrade
Hello everyone. I've been studying the SBL upgrade of CC2540 recently. When I used the official Serial Bootloader Demo Tool V1.1 tool to import the bootload BIN file into the target board, a timeout e...
seanwaye Wireless Connectivity
Newbie help
[table=98%] [tr][td]How can Zigbee detect which node in the network is faulty? How can I determine if one of the Zigbee nodes is not working? Is there any method? [/td][/tr] [/table]...
sk320381 RF/Wirelessly
Shortcut:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components

  1. 177-007-51S5EG6-04
  2. 316-87-137-41-002101
  3. EH2500TTS-35.328M TR
  4. VEM38GT33-32.768K-2.5/0+50
  5. LP49-18-32.0M-15G3KJ
  6. CMF26ALEADFREE
  7. CDR01BP560BJMSAT
  8. M80-4T12601F2-03-302-05-301
  9. SVT15120U
  10. GDZJ27A-34B
  11. 1N4762A-GB
  12. A2547WR-F-12P

Popular Articles

  1. DRAM prices fall for the first time in 10 months, has the downward cycle begun?
  2. iPhone 13 price to increase, but with greater capacity
  3. S3C2440 startup code analysis start.s
  4. ARMv8-A architecture basics - system control registers
  5. Improving Power Efficiency Using Gallium Nitride (GaN)
  6. The Ministry of Industry and Information Technology officially plans to use the 76-79 GHz frequency band for automotive radar
  7. Toshiba launches 20Ah-HP SCiB rechargeable lithium-ion battery that combines high energy and high power
  8. VSORA launches Tyr chip series to support L3-L5 autonomous driving
  9. Motorola edge 30 Pro exposed to be powered by Snapdragon 8
  10. Xiaomi's new "Chasing Light" product will be released tomorrow: the "small black room" will be transformed into an e-sports room

Technical ResourceMore

  1. Realize wireless serial communication between S7-200 series PLC and PC based on free port mode
  2. How to install plugins in AD10 [revised version]
  3. Some examples of electronic simulation based on labview
  4. Performance comparison of classic spatial spectrum estimation algorithms
  5. HCS12 microcontroller principle and application_Wang Wei
  6. Reduce your system power and cost with Artix-7 FPGAs
  7. High Frequency Transformer Introduction
  8. MTK Mobile Phone Repair Guide
  9. MAX14562 (protects valuable consumer circuits)
  10. Power supply and power PCB board design experience

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 696  627  1252  2007  88  15  13  26  41  2 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号