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FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
QFET
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
Features
• 550V @T
J
= 150°C
• Typ. R
DS(on)
= 0.265Ω @V
GS
= 10 V
• Low gate charge (typical 42 nC)
• Low Crss (typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies, active power factor correc-
tion, electronic lamp ballast based on half bridge topology.
D
●
◀
G
G DS
▲
●
●
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQP18N50V2
18
12.1
72
FQPF18N50V2
500
18*
12.1*
72*
±
30
330
18
25
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
208
1.67
-55 to +150
300
69
0.55
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP18N50V2/FQPF18N50V2 Rev. D
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
PV218N50
PFV218N50
Device
FQP18N50V2
FQPF18N50V2
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
500
--
--
--
--
--
--
0.5
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 9 A
V
DS
= 40 V, I
D
= 9 A
(Note 4)
3.0
--
--
--
0.225
16
5.0
0.265
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 400 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 400 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
2530
300
11
76
150
3290
390
14.3
--
--
pF
pF
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400 V, I
D
= 18 A,
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
V
DD
= 250 V, I
D
= 18 A,
R
G
= 25
Ω
--
--
--
--
--
--
--
40
150
95
110
42
12
14
90
310
200
230
55
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
18A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 18 A
V
GS
= 0 V, I
S
= 18 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
420
5.4
18
72
1.4
--
--
A
A
V
ns
µC
FQP18N50V2/FQPF18N50V2 Rev. D
2
www.fairchildsemi.com
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
1
Figure 2. Transfer Characteristics
I
D
, Drain Current [A]
10
7.0 V
6.5 V
6.0 V
Bottom :
5.5 V
I
D
, Drain Current [A]
10
1
150
℃
25
℃
10
0
10
0
-55
℃
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
-1
10
※
Notes :
1. V
DS
= 40V
2. 250µs Pulse Test
10
-1
10
0
10
1
10
-1
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.0
Drain-Source On-Resistance
0.8
I
DR
, Reverse Drain Current [A]
R
DS(ON)
[Ω ],
10
1
0.6
V
GS
= 10V
0.4
V
GS
= 20V
0.2
※
Note : T
J
= 25
℃
10
0
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
0.0
0
10
20
30
40
50
60
70
10
-1
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
, Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
7000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
Figure 6. Gate Charge Characteristics
12
V
GS
, Gate-Source Voltage [V]
6000
5000
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 100V
10
V
DS
= 250V
V
DS
= 400V
Capacitance [pF]
8
4000
3000
2000
1000
6
C
iss
C
oss
※
Notes :
4
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= 18A
C
rss
0
-1
10
10
0
10
1
0
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQP18N50V2/FQPF18N50V2 Rev. D
3
www.fairchildsemi.com
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
R
DS(ON)
, (Normalized)
2.0
1.0
1.5
1.0
※
Notes :
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
0.5
1. V
GS
= 10 V
2. I
D
= 9 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
for FQP18N50V2
Figure 9-2. Maximum Safe Operating Area
for FQPF18N50V2
Operation in This Area
Operation in This Area
10
2
is Limited by R
DS(on)
10
2
is Limited by R
DS(on)
I
D
, D rain C urrent [A]
I
D
, Drain Current [A]
100 us
10
1
100 us
10
1
1 ms
10 ms
DC
1 ms
10 ms
100 ms
DC
10
0
※
Notes :
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
20
I
D
, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
FQP18N50V2/FQPF18N50V2 Rev. D
4
www.fairchildsemi.com
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