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S6M

Description
6 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size645KB,2 Pages
ManufacturerThinki Semiconductor Co.,Ltd.
Websitehttp://www.thinkisemi.com/
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S6M Overview

6 A, 1000 V, SILICON, RECTIFIER DIODE

S6A thru S6M
S6A thru S6M
SMC/DO-214AB
®
Pb
Pb Free Plating Product
6.0 Ampere Surface Mount Glass Passivated General Purpose Rectifier
Features
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
¬
Glass passivated chip junction
Unit: inch (mm)
.128(3.25)
.108(2.75)
Mechanical Data
¬
¬
¬
¬
¬
¬
Case: Molded plastic SMC/DO-214AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750
method 2026
Polarity:Color band denotes cathode end
Mounting position: Any
Weight: 0.21 gram approximately
.103(2.62)
.079(2.00)
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
.050(1.27)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.203)
.002(.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=75
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 6.0 A
Maximum DC Reverse Current @T
J
=25
C
o
At Rated DC Blocking Voltage @T
J
=125
C
Typical junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction and Storage
Temperature Range
NOTES : (1) Thermal Resistance junction to ambient.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
o
o
.245(6.22)
.220(5.59)
S6A
50
35
50
S6B
100
70
100
S6D
200
140
200
S6G
400
280
400
6.0
S6J
600
420
600
S6K
800
560
800
S6M
1000
700
1000
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
150
A
V
F
I
R
C
J
R
JA
1.1
10.0
250
50
20
-65 to +150
o
V
uA
uA
pF
C/W
o
T
J
,T
STG
C
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

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S6M S6A S6B S6D S6G S6J S6K
Description 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 6 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE
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