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IRF6718L2TRPBF

Description
61 A, 25 V, 0.0007 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size248KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6718L2TRPBF Overview

61 A, 25 V, 0.0007 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF6718L2TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-XBCC-N7
Contacts7
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)530 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)270 A
Maximum drain current (ID)61 A
Maximum drain-source on-resistance0.0007 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N7
JESD-609 codee1
Number of components1
Number of terminals7
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)83 W
Maximum pulsed drain current (IDM)490 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 97395E
IRF6718L2TRPbF
IRF6718L2TR1PbF
RoHS Compliant Containing No Lead and Bromide

l
Dual Sided Cooling Compatible

l
Ultra Low Package Inductance
l
Very Low R
DS(ON)
for Reduced Conduction Losses
l
Optimized for Active O-Ring / Efuse Applications
l
Compatible with existing Surface Mount Techniques

l
Typical values (unless otherwise specified)
DirectFET
®
Power MOSFET
‚
R
DS(on)
Q
gs2
9.4nC
V
DSS
Q
g
tot
V
GS
Q
gd
20nC
R
DS(on)
Q
oss
50nC
25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V
Q
rr
67nC
V
gs(th)
1.9V
64nC
Applicable DirectFET Outline and Substrate Outline

S1
S2
SB
M2
M4
L6
DirectFET® ISOMETRIC
L4
L6
L8
Description
The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when
application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The
IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
4
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
25
±20
61
52
270
490
530
49
VGS, Gate-to-Source Voltage (V)
A
mJ
A
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
100 120 140 160 180
QG Total Gate Charge (nC)
ID= 49A
VDS= 20V
VDS= 13V
ID = 61A
3
2
T J = 125°C
1
T J = 25°C
0
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.44mH, R
G
= 25Ω, I
AS
= 49A.

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
07/27/11

IRF6718L2TRPBF Related Products

IRF6718L2TRPBF IRF6718L2TR1PBF
Description 61 A, 25 V, 0.0007 ohm, N-CHANNEL, Si, POWER, MOSFET 61 A, 25 V, 0.0007 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-XBCC-N7 CHIP CARRIER, R-XBCC-N7
Contacts 7 7
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features ULTRA-LOW RESISTANCE ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 530 mJ 530 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (Abs) (ID) 270 A 270 A
Maximum drain current (ID) 61 A 61 A
Maximum drain-source on-resistance 0.0007 Ω 0.0007 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N7 R-XBCC-N7
JESD-609 code e1 e1
Number of components 1 1
Number of terminals 7 7
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 83 W 83 W
Maximum pulsed drain current (IDM) 490 A 490 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN SILVER COPPER TIN SILVER COPPER
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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