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IRF6810STR1PBF

Description
DirectFET®Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size265KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6810STR1PBF Overview

DirectFET®Power MOSFET

IRF6810STR1PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)51 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.0052 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)130 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD -96393
IRF6810STRPbF
IRF6810STR1PbF
l
l
l
l
l
l
l
l
l
l
DirectFET
plus
Power MOSFET
‚
RoHS Compliant and Halogen Free

Typical values (unless otherwise specified)
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible

V
DSS
V
GS
R
DS(on)
R
DS(on)
Ultra Low Package Inductance
25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V
Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Optimized for Control FET Application
7.4nC 2.7nC 0.98nC 12nC
8.9nC
1.6V
Compatible with existing Surface Mount Techniques

100% Rg tested
Footprint compatible to DirectFET
D
G
S
D
®
Applicable DirectFET Outline and Substrate Outline

S1
S2
SB
M2
M4
L4
S1
L6
DirectFET
®
plus
ISOMETRIC
L8
Description
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
15
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±16
16
13
50
130
51
13
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
ID= 13A
VDS= 20V
VDS= 13V
VDS= 5V
A
mJ
A
ID = 16A
10
TJ = 125°C
5
T J = 25°C
0
0
2
4
6
8
10
12
14
16
20
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.601mH, R
G
= 50Ω, I
AS
= 13A.
www.irf.com
1
08/08/11

IRF6810STR1PBF Related Products

IRF6810STR1PBF IRF6810SPBF IRF6810STRPBF
Description DirectFET®Power MOSFET DirectFET®Power MOSFET DirectFET®Power MOSFET
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-XBCC-N3 - CHIP CARRIER, R-XBCC-N3
Contacts 3 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 51 mJ - 51 mJ
Shell connection DRAIN - DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V - 25 V
Maximum drain current (Abs) (ID) 50 A - 50 A
Maximum drain current (ID) 16 A - 16 A
Maximum drain-source on-resistance 0.0052 Ω - 0.0052 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N3 - R-XBCC-N3
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 3 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material UNSPECIFIED - UNSPECIFIED
Package shape RECTANGULAR - RECTANGULAR
Package form CHIP CARRIER - CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 20 W - 20 W
Maximum pulsed drain current (IDM) 130 A - 130 A
surface mount YES - YES
Terminal surface Matte Tin (Sn) - MATTE TIN
Terminal form NO LEAD - NO LEAD
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature 40 - 40
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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