HEXFET
®
Power MOSFET plus Schottky Diode
l
RoHs Compliant Containing No Lead and Bromide
l
Integrated Monolithic Schottky Diode
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
IRF6898MPbF
IRF6898MTRPbF
R
DS(on)
R
DS(on)
Typical values (unless otherwise specified)
V
DSS
25V max
V
GS
±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
Q
g
tot
Q
gd
15nC
Q
gs2
4.7nC
Q
rr
66nC
Q
oss
43nC
V
gs(th)
1.6V
41nC
S
D
G
S
D
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note
AN-1035
is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
Max.
Units
V
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±16
35
28
213
280
473
28
A
mJ
A
3.0
Typical RDS(on) (mΩ)
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
ID= 28A
VDS= 20V
VDS= 13V
ID = 35A
2.0
T J = 125°C
1.0
T J = 25°C
2
4
6
8
10
12
14
16
0.0
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.21mH, R
G
= 50Ω, I
AS
= 28A.
1
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2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
25
–––
–––
–––
1.1
–––
–––
–––
–––
175
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
0.8
1.2
1.6
-4.9
–––
–––
–––
–––
41
15
4.7
15
6.3
19.7
43
0.3
18
46
24
19
5435
1780
359
–––
–––
1.1
1.6
2.1
500
100
-100
–––
62
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
V
V/°C I
D
= 10mA ( 25°C-125°C)
mΩ
V
μA
nA
S
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 20V, V
GS
= 0V
V
GS
= 16V
V
GS
= -16V
V
DS
=13V, I
D
=28A
V
DS
= 13V
i
= 28A
i
––– mV/°C V
DS
= V
GS
, I
D
= 10mA
nC
V
GS
= 4.5V
I
D
= 28A
See Fig.15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 28A
R
G
= 1.8Ω
See Fig.17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
32
66
35
280
0.75
48
99
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
=28A
di/dt = 300A/μs
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ãg
i
i
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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©
2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
el
el
f
Parameter
Max.
2.1
1.3
78
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
f
el
jl
kl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
60
–––
–––
1.6
–––
Units
°C/W
eÃ
W/°C
100
10
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
March 21, 2013
3
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©
2013 International Rectifier
IRF6898MTRPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
2.3V
0.1
2.3V
≤
60μs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
1
100
0.1
1
10
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
1.6
ID = 35A
V GS = 10V
V GS = 4.5V
ID, Drain-to-Source Current (A)
100
TJ = 25°C
TJ = -40°C
10
Typical RDS(on) (Normalized)
VDS = 15V
≤60μs
PULSE WIDTH
2.5
3.0
3.5
TJ = 150°C
1.4
1.2
1.0
1
0.8
0.1
1.5
2.0
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
6.0
T J = 25°C
5.0
Vgs = 3.5V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 15V
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
4.0
3.0
2.0
1.0
0.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100 125 150 175 200
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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2013 International Rectifier
ID, Drain Current (A)
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
March 21, 2013
IRF6898MTRPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10msec
100μsec
100
10
DC
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10
100
10
T J = 150°C
T J = 25°C
T J = -40°C
VGS = 0V
1
0.1
0.4
0.7
1.0
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
225
200
175
ID, Drain Current (A)
Fig 11.
Maximum Safe Operating Area
2.5
Typical VGS(th) Gate threshold Voltage (V)
150
125
100
75
50
25
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
2000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
1.7A
2.5A
BOTTOM 28A
1800
1600
1400
1200
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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©
2013 International Rectifier
March 21, 2013
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