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IRF6898MTRPBF

Description
HEXFET Power MOSFET plus Schottky Diode
File Size261KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRF6898MTRPBF Overview

HEXFET Power MOSFET plus Schottky Diode

HEXFET
®
Power MOSFET plus Schottky Diode
‚
l
RoHs Compliant Containing No Lead and Bromide
‚
l
Integrated Monolithic Schottky Diode
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible

l
Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques

l
100% Rg tested
IRF6898MPbF
IRF6898MTRPbF
R
DS(on)
R
DS(on)
Typical values (unless otherwise specified)
V
DSS
25V max
V
GS
±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
Q
g
tot
Q
gd
15nC
Q
gs2
4.7nC
Q
rr
66nC
Q
oss
43nC
V
gs(th)
1.6V
41nC
S
D
G
S
D
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
MP
DirectFET™ ISOMETRIC
Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note
AN-1035
is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
Max.
Units
V
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±16
35
28
213
280
473
28
A
mJ
A
3.0
Typical RDS(on) (mΩ)
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
ID= 28A
VDS= 20V
VDS= 13V
ID = 35A
2.0
T J = 125°C
1.0
T J = 25°C
2
4
6
8
10
12
14
16
0.0
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 1.21mH, R
G
= 50Ω, I
AS
= 28A.
1
www.irf.com
©
2013 International Rectifier
March 21, 2013

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