PD - 96344
AUTOMOTIVE GRADE
Features
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AUIRFR5410
HEXFET
®
Power MOSFET
D
●
●
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
R
DS(on)
max.
I
D
-100V
0.205
-13A
G
S
Description
Specifically designed for Automotive applications,
this Cellular Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other
applications.
D
S
D-Pak
AUIRFR5410
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
-13
-8.2
-52
66
0.53
± 20
194
-8.4
6.3
-5.0
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
c
d
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
c
e
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
R
JC
R
JA
R
JA
Junction-to-Case
gj
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
i
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
AUIRFR5410
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-100
–––
–––
-2.0
3.2
–––
–––
–––
–––
–––
–––
-0.12 –––
––– 0.205
–––
-4.0
–––
–––
–––
-25
––– -250
–––
100
––– -100
V
V/°C
V
S
μA
nA
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -7.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -25V, I
D
= -7.8A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
58
45
46
4.5
7.5
760
260
170
58
8.3
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= -8.4A
V
DS
= -80V
V
GS
= -10V
V
DD
= =-50V
I
D
= -8.4A
R
G
= 9.1
R
D
= 6.2
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
fh
ns
fh
D
G
S
nH
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
h
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
130
650
-13
A
-52
-1.6
190
970
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -7.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -8.4A
di/dt = 100A/μs
f
S
fh
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 6.4mH, R
G
= 25,
I
AS
= -7.8A. (See Figure 12)
I
SD
-7.8A, di/dt
200A/µs, V
DD
V
(BR)DSS
,
T
J
150°C.
Pulse width
300µs;
duty cycle 2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRF9530N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
R
is measured at Tj approximately 90°C.
2
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AUIRFR5410
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
Class M2 (200V)
AEC-Q101-002
Class H1B (1000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR5410
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
1
-4.5V
0.1
1
-4.5V
0.01
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
0.1
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -14A
2.0
10
T
J
= 150
°
C
1.5
1.0
1
0.5
0.1
V DS = 10V
20μs PULSE WIDTH
4
5
6
7
8
9
10
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRFR5410
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -8.4A
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
C, Capacitance (pF)
15
1200
C
iss
10
800
C
oss
C
rss
5
400
0
1
10
100
A
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
100
10us
T
J
= 25
°
C
1
10
100us
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
T
C
= 25° C
T
J
= 150° C
Single Pulse
1
10
1ms
10ms
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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5
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