AUTOMOTIVE GRADE
PD -
96397A
AUIRFS4010-7P
Features
l
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HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
D
100V
3.3mΩ
4.0mΩ
190A
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
G
S
G
S
S
S
S
7 Pin
AUIRFS4010-7P
D
2
Pak
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
)
is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
190
130
740
380
2.5
± 20
330
See Fig. 14, 15, 22a, 22b
26
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
c
d
e
c
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
jk
Parameter
Typ.
Max.
0.40
40
Units
°C/W
i
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
10/31/11
AUIRFS4010-7P
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
–––
–––
2.0
210
–––
Conditions
–––
0.11
3.3
–––
–––
2.1
–––
–––
–––
–––
–––
–––
4.0
4.0
–––
–––
20
250
100
-100
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 110A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 110A
f
Ω
–––
–––
–––
–––
μA
nA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
36
48
102
19
56
100
48
9830
650
260
730
740
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 110A
V
DS
= 50V
V
GS
= 10V
I
D
= 110A, V
DS
=0V, V
GS
= 10V
V
DD
= 65V
I
D
= 110A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
f
ns
f
g
h
pF
h
g
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
186
A
740
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
60
–––
ns
–––
67
–––
––– 150 –––
nC
T
J
= 125°C
––– 180 –––
–––
4.7
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
T
J
= 25°C
V
R
= 85V,
T
J
= 125°C
I
F
= 110A
di/dt = 100A/μs
T
J
= 25°C
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.052mH
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
G
= 25Ω, I
AS
= 110A, V
GS
=10V. Part not recommended for use
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
above this value .
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
I
SD
≤
110A, di/dt
≤
1310A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
400μs; duty cycle
≤
2%.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
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AUIRFS4010-7P
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
7L-D2 PAK
MSL1
Class M4(+/- 800V )
(per AEC-Q101-002)
Class H3A(+/- 6000V )
(per AEC-Q101-001)
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†††
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
†††
†††
†
††
†††
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRFS4010-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
1
4.0V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
4.0V
10
10
100
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
ID = 110A
VGS = 10V
2.0
100
T J = 175°C
10
T J = 25°C
(Normalized)
1.5
1
VDS = 50V
≤
60μs PULSE WIDTH
2
3
4
5
6
7
1.0
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 110A
VDS= 80V
VDS= 50V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
25
50
75 100 125 150 175 200 225
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS4010-7P
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10msec
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
200
180
160
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
6.0
5.0
4.0
Energy (μJ)
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
1200
1000
800
600
400
200
0
ID
TOP
21A
38A
BOTTOM 110A
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60 70 80 90 100 110
VDS, Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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