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AUIRL1404ZS

Description
160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size742KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRL1404ZS Overview

160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

AUIRL1404ZS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)490 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)180 A
Maximum drain current (ID)160 A
Maximum drain-source on-resistance0.0031 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
Maximum pulsed drain current (IDM)790 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
 
AUTOMOTIVE GRADE
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
TO-220AB
AUIRL1404Z
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
 
HEXFET
®
Power MOSFET
40V
2.5m
3.1m
180A
160A
D
S
G
D
2
Pak
AUIRL1404ZS
G
S
D
TO-262
AUIRL1404ZL
G
Gate
D
Drain
S
Source
Base part number
AUIRL1404Z
AUIRL1404ZL
AUIRL1404ZS
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRL1404Z
AUIRL1404ZL
AUIRL1404ZS
AUIRL1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
180
130
160
790
200
1.3
± 16
190
490
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
 
Units
A
W
W/°C
V
mJ
A
mJ
°C 
 
 
Thermal Resistance
 
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27

AUIRL1404ZS Related Products

AUIRL1404ZS AUIRL1404Z AUIRL1404ZL
Description 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Parts packaging code D2PAK TO-220AB TO-262AA
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Other features AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 490 mJ 490 mJ 490 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V 40 V 40 V
Maximum drain current (Abs) (ID) 180 A 180 A 180 A
Maximum drain current (ID) 160 A 160 A 160 A
Maximum drain-source on-resistance 0.0031 Ω 0.0031 Ω 0.0031 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSIP-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Celsius) 260 250 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 200 W 200 W 200 W
Maximum pulsed drain current (IDM) 790 A 790 A 790 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO NO
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Humidity sensitivity level 1 - 1
Base Number Matches 1 1 -
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