AUTOMOTIVE GRADE
AUIRF6215S
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max.
I
D
D
Features
Advanced Planar Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
-150V
0.29
-13A
S
G
D
2
Pak
AUIRF6215S
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
G
Gate
D
Drain
S
Source
Base part number
AUIRF6215S
Package Type
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF6215S
AUIRF6215STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-9.0
-44
3.8
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
1.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-13
AUIRF6215S
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
36
53
37
7.5
860
220
130
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.29
V
GS
= -10V, I
D
= -6.6A
0.58
V
GS
= -10V, I
D
= -6.6A,T
J
=150°C
-4.0
V V
DS
= V
GS
, I
D
= -250µA
–––
S V
DS
= -25V, I
D
= -6.6A
-25
V
DS
= -150V, V
GS
= 0V
µA
-250
V
DS
= -120V,V
GS
= 0V,T
J
=150°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
66
8.1
35
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= -6.6A
nC
V
DS
= -120V
V
GS
= -10V
V
DD
= -75V
I
D
= -6.6A
ns
R
G
= 6.8
R
D
= 12
Between lead,6mm (0.25in.)
nH
from package and center
of die contact
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -6.6A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -6.6A
µC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
160
1.2
-11
-44
-1.6
240
1.7
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 14mH, R
G
= 25, I
AS
= -6.6A. (See fig.12)
I
SD
-6.6A,
di/dt
620A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R
is measured at T
J
of approximately 90°C
2
2015-11-13
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