PD -97552
AUTOMOTIVE GRADE
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Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 250W per Channel into 4Ω with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
AUIRF7675M2TR
AUIRF7675M2TR1
DirectFET Power MOSFET
V
(BR)DSS
150V
R
DS(on)
typ.
47m
max.
R
G (typical)
Q
g (typical)
:
56m
:
1.2
:
21nC
S
D
G
S
D
Applicable DirectFET Outline and Substrate Outline
M2
DirectFET ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
f
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
f
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
e
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
150
± 20
18
13
4.4
90
72
45
2.7
59
170
See Fig.18a, 18b, 15, 16
270
-55 to + 175
Units
V
A
f
e
f
W
mJ
A
mJ
°C
Ã
g
d
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJ-Can
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
fl
e
j
k
Parameter
Typ.
–––
12.5
20
–––
1.4
0.3
Max.
60
–––
–––
3.3
–––
Units
°C/W
Junction-to-PCB Mounted
Linear Derating Factor
fl
W/°C
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
8/16/10
AUIRF7675M2TR/TR1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
150
–––
–––
3.0
–––
16
–––
Typ. Max. Units
–––
0.16
47
4.0
-11
–––
1.2
–––
–––
–––
–––
21
5.2
1.6
7.1
7.1
8.7
8.8
10
13
14
7.5
1360
190
41
1210
92
Conditions
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
GS
= 0V, I
D
= 250μA
–––
V
––– V/°C Reference to 25°C, I
D
= 1mA
56
mΩ V
GS
= 10V, I
D
= 11A
5.0
V V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
–––
S V
DS
= 50V, I
D
= 11A
5.0
Ω
20
μA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
250
100
nA V
GS
= 20V
V
GS
= -20V
-100
i
Dynamic Characteristics @ T
J
= 25°C (unless otherwise stated)
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 75V
V
GS
= 10V
I
D
= 11A
See Fig. 6 and 17
nC
nC
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 75V, V
GS
= 10V
I
D
= 11A
R
G
=6.8Ω
V
GS
= 0V
V
DS
= 25V
Ãi
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 120V, f=1.0MHz
Diode Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
63
180
18
72
1.3
95
270
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
DD
= 25V
di/dt = 100A/μs
D
Ãg
i
S
i
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through
are on page 10
2
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AUIRF7675M2TR/TR1
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This product has passed an Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
SMALL CAN
MSL1, 260°C
Class M4 (+/-400V)
AEC-Q101-002
Class H1B (+/-1000V)
AEC-Q101-001
Charged Device
Model
Class HC4 (+/-1000V)
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7675M2TR/TR1
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
5.0V
1
1
5.0V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
≤
60μs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m
Ω)
140
ID = 11A
120
Fig 2.
Typical Output Characteristics
200
Vgs = 10V
160
TJ = 125°C
100
TJ = 125°C
80
120
60
TJ = 25°C
40
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
80
TJ = 25°C
40
0
10
20
30
40
50
60
ID, Drain Current (A)
Fig 3.
Typical On-Resistance vs. Gate Voltage
100
Fig 4.
Typical On-Resistance vs. Drain Current
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
2.5
ID = 11A
V GS = 10V
2.0
1
TJ = -40°C
TJ = 25°C
TJ = 175°C
1.5
0.1
V DS = 50V
≤
60μs PULSE WIDTH
0.01
3
4
5
6
7
8
9
V GS, Gate-to-Source Voltage (V)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature
4
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AUIRF7675M2TR/TR1
5.5
VGS(th), Gate threshold Voltage (V)
100
TJ = -40°C
TJ = 25°C
TJ = 175°C
10
4.5
3.5
ID = 100μA
ID = 1.0mA
ID = 250μA
2.5
ID = 1.0A
ISD, Reverse Drain Current (A)
1
V GS = 0V
1.5
-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
0.1
0.2
0.4
0.6
0.8
1.0
V SD, Source-to-Drain Voltage (V)
Fig 7.
Typical Threshold Voltage vs. Junction Temperature
50
Gfs , Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
40
TJ = 25°C
10000
TJ = 175°C
C, Capacitance (pF)
30
1000
Ciss
Coss
20
10
100
V DS = 10V
380μs PULSE WIDTH
10
0
4
8
12
16
20
24
1
10
V DS, Drain-to-Source Voltage (V)
100
ID,Drain-to-Source Current (A)
Crss
0
Fig 9.
Typical Forward Transconductance Vs. Drain Current
14
ID= 11A
V GS, Gate-to-Source Voltage (V)
Fig 10.
Typical Capacitance vs.Drain-to-Source Voltage
20
V DS= 120V
V DS= 75V
V DS= 30V
ID, Drain Current (A)
12
10
8
6
4
2
0
0
4
8
16
12
8
4
0
12
16
20
24
28
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
TC , Case Temperature (°C)
Fig.11
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12.
Maximum Drain Current vs. Case Temperature
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