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AUIRF7675M2TR1

Description
DirectFETPower MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size282KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRF7675M2TR1 Overview

DirectFETPower MOSFET

AUIRF7675M2TR1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)170 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)90 A
Maximum drain current (ID)4.4 A
Maximum drain-source on-resistance0.056 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)72 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD -97552
AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 250W per Channel into 4Ω with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
AUIRF7675M2TR
AUIRF7675M2TR1
DirectFET™ Power MOSFET
‚
V
(BR)DSS
150V
R
DS(on)
typ.
47m
max.
R
G (typical)
Q
g (typical)
:
56m
:
1.2
:
21nC
S
D
G
S
D
Applicable DirectFET Outline and Substrate Outline

M2
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
f
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
f
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
e
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
150
± 20
18
13
4.4
90
72
45
2.7
59
170
See Fig.18a, 18b, 15, 16
270
-55 to + 175
Units
V
A
f
e
f
W
mJ
A
mJ
°C
Ù
g
d
™
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJ-Can
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
fl
e
j
k
Parameter
Typ.
–––
12.5
20
–––
1.4
0.3
Max.
60
–––
–––
3.3
–––
Units
°C/W
Junction-to-PCB Mounted
Linear Derating Factor
fl
W/°C
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
8/16/10

AUIRF7675M2TR1 Related Products

AUIRF7675M2TR1 AUIRF7675M2TR
Description DirectFETPower MOSFET DirectFETPower MOSFET
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-XBCC-N3 CHIP CARRIER, R-XBCC-N3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 170 mJ 170 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V 150 V
Maximum drain current (Abs) (ID) 90 A 90 A
Maximum drain current (ID) 4.4 A 4.4 A
Maximum drain-source on-resistance 0.056 Ω 0.056 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N3 R-XBCC-N3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 45 W 45 W
Maximum pulsed drain current (IDM) 72 A 72 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) MATTE TIN
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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