AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFP4409
HEXFET
®
Power MOSFET
D
G
V
DSS
R
DS(on) typ.
max
300V
56m
69m
38A
S
I
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications.
G
S
D
G
TO-247AC
D
S
Gate
Ordering Information
Base part number
AUIRFP4409
Package Type
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Drain
Source
Complete Part Number
AUIRFP4409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V
GS
E
AS (Thermally limited)
T
J
T
STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
°C/W
Max.
38
27
152
341
2.3
± 20
541
-55 to + 175
°C
300
10 lbf·in (1.1 N·m)
W
W/°C
V
mJ
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Parameter
Min.
300
–––
–––
3.0
–––
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.24
56
–––
–––
–––
–––
–––
1.3
–––
83
28
26
18
23
34
20
5168
300
77
196
265
–––
–––
69
5.0
20
250
100
-100
–––
–––
125
42
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, I
D
= 3.5mA
m V
GS
= 10V, I
D
= 24A
V
µA
nA
V
DS
= 50V, I
D
=24A
I
D
= 24A
nC
V
DS
= 150V
V
GS
= 10V
V
DD
= 195V
I
D
= 24A
ns
R
G
= 2.2
V
GS
= 10V
S
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
pF
V
GS
= 0V, VDS = 0V to 240V
See Fig.11
V
GS
= 0V, VDS = 0V to 240V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
V
DS
= V
GS
, I
D
= 250µA
V
DS
=300 V, V
GS
= 0V
V
DS
=300V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Typ. Max. Units
–––
–––
–––
302
379
1739
2497
13
40
A
160
1.3
–––
–––
–––
–––
–––
V
ns
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
Notes:
D
S
T
J
= 25°C,I
S
= 24A,V
GS
= 0V
T
J
= 25°C
V
DD
= 255V
T
J
= 125°C
I
F
= 24A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting T
J
= 25°C, L = 2.05mH, R
G
= 50, I
AS
= 24A, V
GS
=10V.
I
SD
24A,
di/dt
1771A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
http://www.irf.com/technical-info/ app notes/an-994.pdf
Ris measured at T
J
approximately 90°C
2
www.irf.com
© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
TO-247AC
N/A
Class M4 (+/- 500V)
††
AEC-Q101-002
Class H2 (+/- 4000V)
††
AEC-Q101-001
Class C5 (+/- 2000)
††
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
†
ESD
Qualification standards can be found at International Rectifier’s web site:
http//www.irf.com/
†† Highest passing voltage.
3
www.irf.com
© 2013 International Rectifier
July 10, 2013
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
AUIRFP4409
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
5.0V
1
0.1
5.0V
1
60µs
PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 24A
3.0
2.5
2.0
1.5
1.0
0.5
ID, Drain-to-Source Current(A)
VGS = 10V
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 50V
0.1
2
4
6
8
10
12
14
60µs
PULSE WIDTH
-60
-20
20
60
100
140
180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 24A
VDS = 240V
VDS = 150V
VDS= 60V
10000
C, Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2013 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
July 10, 2013
1000
1000
AUIRFP4409
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
ISD, Reverse Drain Current (A)
100
TJ = 175°C
ID, Drain-to-Source Current (A)
100
100µsec
10
TJ = 25°C
10
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
DC
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
0.1
100
1000
VDS , Drain-to-Source Voltage (V)
42
35
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
370
360
350
340
330
320
310
300
290
280
270
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
Id = 3.5mA
ID, Drain Current (A)
28
21
14
7
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
9.0
Fig 10.
Drain-to–Source Breakdown Voltage
6.0
VGS(th), Gate threshold Voltage (V)
8.0
7.0
6.0
5.0
Energy (µJ)
5.0
4.0
3.0
2.0
1.0
0.0
-50
0
50
100 150 200 250 300 350
4.0
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.0
-75
-25
25
75
125
175
225
TJ , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
oss
Stored Energy
5
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© 2013 International Rectifier
Fig 12.
Threshold Voltage vs. Temperature
July 10, 2013
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