FGS15N40L
September 2001
IGBT
FGS15N40L
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench
gate structure have superior performance in conductance
and switching to planar gate structure and also have wide
noise immunity. These devices are well suitable for
strobe application
Features
• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive
Application
• Strobe Flash
C
C
C
C
G
E
C
E
E
G
E
8-SOP
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
T
L
T
C
= 25°C unless otherrwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
PurPoses from case for 5 secnds
@ T
a
= 25°C
FGS15N40L
400
±
6
130
2.0
-40 to +150
-40 to +150
300
Units
V
V
A
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient(PCB Mount)
Typ.
--
Max.
62.5
Units
°C/W
Notes: Mounted on 1” square PCB(FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
G-E leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
450
--
--
--
--
--
--
10
±
0.1
V
µA
µA
On Characteristics
V
GE(th)
V
CE(sat)
G-E threshold Voltage
C-E Saturation Voltage
I
C
= 0V, I
C
= 1mA
I
C
= 130A , V
GE
= 4.0V
-
2.0
-
4.5
1.4
8.0
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GE
= 0V , V
CE
= 30V
f = 1MHz
--
--
--
3800
45
30
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 300V , I
C
= 130A
V
GE
= 4.0V , R
G
= 15Ω
*
Resistive Load
--
--
--
--
0.15
1.5
0.15
1.5
--
--
0.3
3.0
us
us
us
us
Notes : Recommendation of Rg Value : Rg
≥ 15Ω
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
7
180
Commom Emitter
T
C
= 25℃
6V
5V
4V
Common Emitter
V
GE
=4.0V
150
Collector-Emitter Voltage, Vce[v]
6
Collector Current, I
C
[A]
120
V
GE
= 3V
90
Ic=130A
5
4
Ic=100A
60
30
3
Ic=70A
0
0
2
4
6
8
2
-50
0
50
100
150
Collector-Emitter Voltage, V
CE
[V]
Case Temperature,T
C
[
℃
]
Fig 1. Typical Output Chacracteristics
Fig 2. Saturation Voltage vs. Case Temerature
at Variant Current Level
10
Common Emitter
T
C
=-40℃
10
Common Emitter
T
C
=25℃
Collector-Emitter Voltage, V [V]
CE
Collector-Emitter Voltage, V
CE
[V]
8
8
6
6
4
100A
2
I
C
=70A
130A
130A
4
100A
2
I
C
=70A
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
Gate-Emitter Voltage ,V
GE
[V]
Gate-Emitter Voltage ,V
GE
[V]
Fig 3. Saturation Voltage vs. V
GE
Fig 4. Saturation Voltage vs. V
GE
10
10000
Common Emitter
T
C
=150℃
Cies
Collector-Emitter Voltage, V
CE
[V]
8
1000
Common Emitter
V
GE
=0V f=1MHz T
C
=25℃
6
130A
4
100A
Capacitance [pF]
100
Coes
Cres
2
I
C
=70A
0
0
1
2
3
4
5
6
10
0
10
20
30
40
Gate-Emitter Voltage ,V
GE
[V]
Collector-Emitter Voltage,V
CE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
Fig 6. Capacitance Characteristics
FGS15N40L Rev. A1
FGS15N40L
200
180
Collector Peak Current, I
CP
[A]
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
Gate-Emitter Voltage,V
GE
[V]
Fig 7. Collector Current Limit Vs
Gate - Emitter Voltage Limit
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Package Dimension
8-SOP
MIN
1.55
±0.20
0.061
±0.008
0.1~0.25
0.004~0.001
#1
#8
4.92
±0.20
0.194
±0.008
5.13
MAX
0.202
(
#4
#5
6.00
±0.30
0.236
±0.012
+
0.10
0.15
-0.05
+
0.004
0.006
-0.002
0.56
)
0.022
1.80
MAX
0.071
MAX0.10
MAX0.004
3.95
±0.20
0.156
±0.008
5.72
0.225
0.50
±0.20
0.020
±0.008
0~
8
°
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
1.27
0.050
0.41
±0.10
0.016
±0.004
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