SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES -
PARTMARKING DETAILS -
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
FZT957 - FZT857
FZT958 - N/A
DEVICE TYPE IN FULL
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-2
-1
3
-55 to +150
FZT957
-300
-300
-6
FZT957
FZT958
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
FZT958
-400
-400
UNIT
V
V
V
-1.5
-0.5
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289
FZT957
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
≤
1k
Ω
I
EBO
V
CE(sat)
-60
-110
-170
-910
-750
100
100
90
200
200
170
10
85
23
108
2500
MIN.
-330
-330
-300
-6
TYP.
-440
-440
-400
-8
-50
-1
-50
-1
-10
-100
-165
-240
-1150
-1020
MAX.
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100
µ
A
I
C
=-1
µ
A, RB
≤
1k
Ω
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
EB
=-6V
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-1A, I
B
=-300mA*
I
C
=-1A, I
B
=-300mA*
I
C
=-1A, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-2A, V
CE
=-10V*
MHz
pF
ns
ns
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
µ
A
µ
A
V
BE(sat)
V
BE(on)
h
FE
300
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 290
FZT957
TYPICAL CHARACTERISTICS
I
C
/I
B
=5
I
C
/I
B
=20
T
amb
=25°C
-55°C
+25°C
+175°C
I
C
/I
B
=5
1.6
1.6
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10 20
- (Volts)
V
1.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
I
+
-
Collector Current (Amps)
0.01
0.1
1
I
+
-
Collector Current (Amps)
10 20
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
- Typical Gain
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
+100°C
+25°C
-55°C
V
CE
=10V
300
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
200
h
h
0.01
0.1
1
10 20
V
100
- (Volts)
I
+
-
Collector Current (Amps)
0.01
0.1
1
I
+
-
Collector Current (Amps)
10 20
h
FE
v I
C
V
BE(sat)
v I
C
Single Pulse Test Tamb=25C
1.6
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
-55°C
+25°C
+100°C
+175°C
V
CE
=10V
10
1
DC
1s
100ms
10ms
1ms
100
µ
s
0.1
V
0.01
0.1
1
10 20
0.01
1
10
100
1000
I
+
-
Collector Current (Amps)
V
CE
- Collector Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
3 - 291
FZT958
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
≤
1k
Ω
I
EBO
V
CE(sat)
-100
-150
-340
-830
-725
100
100
10
200
200
20
85
19
104
2400
MIN.
-400
-400
-400
-6
TYP.
-600
-600
-550
-8
-50
-1
-50
-1
-10
-150
-200
-400
-950
-840
MAX.
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100
µ
A
I
C
=-1
µ
A, RB
≤
1k
Ω
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
EB
=-6V
I
C
=-10mA, I
B
=-1mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-500mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
MHz
pF
ns
ns
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
µ
A
µ
A
V
BE(sat)
V
BE(on)
h
FE
300
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 292
FZT958
TYPICAL CHARACTERISTICS
I
C
/I
B
=5
I
C
/I
B
=20
T
amb
=25°C
-55°C
+25°C
+175°C
1.6
1.6
I
C
/I
B
=5
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
0.01
0.1
1
10 20
- (Volts)
V
1.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
V
I
+
-
Collector Current (Amps)
0.01
0.1
1
I
+
-
Collector Current (Amps)
10 20
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
V
CE
=10V
300
1.6
- Typical Gain
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
200
h
0.01
0.1
1
10 20
h
V
100
I
+
-
Collector Current (Amps)
0.01
0.1
1
I
+
-
Collector Current (Amps)
10 20
h
FE
v I
C
V
BE(sat)
v I
C
Single Pulse Test Tamb=25C
1.6
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
-55°C
+25°C
+100°C
+175°C
V
CE
=10V
10
1
DC
1s
100ms
10ms
1ms
100
µ
s
0.1
V
0.01
0.1
1
10 20
0.01
1
10
100
1000
I
+
-
Collector Current (Amps)
V
CE
- Collector Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
3 - 293
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