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FZT958

Description
1 A, 300 V, PNP, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size138KB,5 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

FZT958 Overview

1 A, 300 V, PNP, Si, POWER TRANSISTOR

FZT958 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage300 V
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption3 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor90
Rated crossover frequency85 MHz
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES -
PARTMARKING DETAILS -
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
FZT957 - FZT857
FZT958 - N/A
DEVICE TYPE IN FULL
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-2
-1
3
-55 to +150
FZT957
-300
-300
-6
FZT957
FZT958
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
FZT958
-400
-400
UNIT
V
V
V
-1.5
-0.5
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289

FZT958 Related Products

FZT958 FZT957 FZT957TA
Description 1 A, 300 V, PNP, Si, POWER TRANSISTOR 1 A, 300 V, PNP, Si, POWER TRANSISTOR 1 A, 300 V, PNP, Si, POWER TRANSISTOR
Number of terminals 4 4 4
Transistor polarity PNP PNP PNP
Maximum collector current 1 A 1 A 1 A
Maximum Collector-Emitter Voltage 300 V 300 V 300 V
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN MATTE TIN
Terminal location DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 3 W 3 W 3 W
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 90 90 90
Rated crossover frequency 85 MHz 85 MHz 85 MHz
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