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ERG74-02

Description
Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size55KB,1 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric Compare View All

ERG74-02 Overview

Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon,

ERG74-02 Parametric

Parameter NameAttribute value
MakerFuji Electric Co., Ltd.
package instructionO-XUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationFAST RECOVERY POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-XUPM-D1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature140 °C
Minimum operating temperature-40 °C
Maximum output current30 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current15000 µA
Maximum reverse recovery time0.3 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
整流ダイオー / Rectifier Diodes
■ 電力用高速ダイオー
ド Fast Recovery Power Diodes
スタッ
ドタイプ Stud type
½ 式
Device type
絶対最大定格
Maximum rating
V
RRM
I
O
Volts Amps.
50
100
200
400
600
50
100
200
400
600
50
100
200
400
600
50
100
200
400
12(Tc=82℃)
接合、
保存温度
Thermal rating
I
FSM*1
Tj and Tstg
Amps. ℃
120
-40 to +140
電気的特性
(Ta=25℃)
Characteristics Ta=25℃)
V
FM
I
RRM*2
Max. Volts
Max. mA
1.3
F
=12A)
(I
5(Tj=140℃)
パッケージ
Package
trr
*3
μsec.
0.3
Rth(j-c)
℃/W
2.1
Power M5F
質 量
Net
mass
Grams
5.5
ERD24-005
ERD24-01
ERD24-02
ERD24-04
ERD24-06
ERD74-005
ERD74-01
ERD74-02
ERD74-04
ERD74-06
ERE24-005
ERE24-01
ERE24-02
ERE24-04
ERE24-06
ERE74-005
ERE74-01
ERE74-02
ERE74-04
ERE74-06
ERG24-005
ERG24-01
ERG24-02
ERG24-04
ERG74-005
ERG74-01
ERG74-02
ERG74-04
ERD75-005
ERD75-01
ERD75-02
ERE75-005
ERE75-01
ERE75-02
ERG75-005
ERG75-01
ERG75-02
ERD27-10
ERD77-10
ERG27-10
ERG77-10
( )条件
*1
正弦波 10ms
*3
I
F
=I
R
=0.1A
*2
12(Tc=90℃)
12(Tc=82℃)
120
120
-40 to +150
-40 to +140
1.3
F
=12A)
(I
1.3
F
=12A)
(I
5(Tj=150℃)
5(Tj=140℃)
0.3
0.3
2.1
2.1
Power M5F
Power M5R
5.5
5.5
12(Tc=90℃)
20(Tc=84℃)
120
180
-40 to +150
-40 to +140
1.3
F
=12A)
(I
1.3
F
=20A)
(I
5(Tj=150℃)
8(Tj=140℃)
0.3
0.3
2.1
1.2
Power M5R
5.5
Power M6F 12
30(Tc=87℃)
20(Tc=84℃)
180
180
-40 to +150
-40 to +140
1.3
F
=30A) 15(Tj=150℃)
(I
1.3
F
=20A) 8(Tj=140℃)
(I
0.3
0.3
1.2
1.2
Power M6F 12
Power M6R 12
600 30(Tc=87℃)
50 30(Tc=87℃)
100
200
400
50 30(Tc=87℃)
100
200
400
50 30(Tc=98℃)
100
200
180
500
-40 to +150
-40 to +140
1.3
F
=30A) 15(Tj=150℃)
(I
1.3
F
=30A) 15(Tj=140℃)
(I
0.3
0.3
1.2
0.8
Power M6R 12
Power M8F 25
500
-40 to +140
1.3
F
=30A) 15(Tj=140℃)
(I
0.3
0.8
Power M8R 25
200
-40 to +150
0.95 I
F
=15A) 1.5
(Tj=150℃)
0.3
2.1
Power M5R
5.5
50 30(Tc=111℃) 350
100
200
50 45(Tc=111℃) 800
100
200
1000 10(Tc=80℃) 120
1000 10
1000 30(Tc=70℃)
1000 30
V
R
=V
RRM
120
500
500
-40 to +150
0.95 I
F
=30A) 3(Tj=150℃)
0.3
1.2
Power M6R 12
-40 to +150
0.95 I
F
=45A) 3(Tj=150℃)
0.3
0.8
Power M8R 25
-40 to +125
-40 to +125
-40 to +125
-40 to +125
1.65 I
F
=10A) 0.5
(Tj=25℃)
1.65 I
F
=10A) 0.5
(Tj=25℃)
1.65 I
F
=30A) 2.0
(Tj=25℃)
1.65 I
F
=30A) 2.0
(Tj=25℃)
0.5
0.5
0.5
0.5
2.1
2.1
0.8
0.8
Power M5F
5.5
Power M5R
5.5
Power M8F 25
Power M8R 25
( )
Conditions
*1
Sine wave, 10ms 
*2
V
R
=V
RRM
*3
I
F
=I
R
=0.1A
36

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ERG74-02 ERG24-02 ERG74-04 ERE74-04 ERG24-04 ERG74-01
Description Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon,
package instruction O-XUPM-D1 O-XUPM-D1 O-XUPM-D1 O-XUPM-D1 O-XUPM-D1 O-XUPM-D1
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C
application FAST RECOVERY POWER FAST RECOVERY POWER FAST RECOVERY POWER FAST RECOVERY POWER FAST RECOVERY POWER FAST RECOVERY POWER
Shell connection CATHODE ANODE CATHODE CATHODE ANODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JESD-30 code O-XUPM-D1 O-XUPM-D1 O-XUPM-D1 O-XUPM-D1 O-XUPM-D1 O-XUPM-D1
Maximum non-repetitive peak forward current 500 A 500 A 500 A 180 A 500 A 500 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1
Maximum operating temperature 140 °C 140 °C 140 °C 140 °C 140 °C 140 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 30 A 30 A 30 A 20 A 30 A 30 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 200 V 400 V 400 V 400 V 100 V
Maximum reverse current 15000 µA 15000 µA 15000 µA 8000 µA 15000 µA 15000 µA
Maximum reverse recovery time 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs
surface mount NO NO NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
Maker Fuji Electric Co., Ltd. - - Fuji Electric Co., Ltd. Fuji Electric Co., Ltd. Fuji Electric Co., Ltd.
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