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IRG7PH50K10D-EPBF

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size557KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRG7PH50K10D-EPBF Overview

IGBT

IRG7PH50K10D-EPBF Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeINSULATED GATE BIPOLAR
 
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 1200V
I
C
= 50A, T
C
=100°C
t
SC
10µs,
T
J(max)
= 150°C
V
CE(ON)
typ. = 1.9V
@ I
C
= 35A
G
E
 
C
G
G
 
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
n-channel
G
Gate
G
IRG7PH50K10DPbF 
C
Collector
C
E
G
C
E
IRG7PH50K10D‐EPbF 
 
E
Emitter
Features
Low V
CE(ON)
and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive V
CE (ON)
Temperature Coefficient
Base part number
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Diode Continous Forward Current
Diode Continous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Max.
1200
90
50
160
160
20
10
±30
400
160
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
 
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
© 2012 International Rectifier
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.3
1.4
–––
–––
Units
°C/W
www.irf.com
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