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US1G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size74KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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US1G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
US1A THRU US1J
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
Reverse Voltage -
50 to 600 Volts
DO-214AC
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Glass passivated chip junctions
Low profile package
Easy pick and place
Ultrafast recovery times for high efficiency
Low forward voltage, low power loss
Built-in strain relief, ideal for automated placement
High temperature soldering guaranteed:
250°C/10 seconds on terminals
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic body over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.002 ounces, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
US1A
US1B
US1D
US1G
US1J
UNITS
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=110°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Maximum thermal resistance
(NOTE 3)
Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
UA
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
UB
100
70
100
UD
200
140
200
1.0
UG
400
280
400
UJ
600
420
600
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
50.0
17.0
1.0
30.0
1.7
10.0
50.0
75.0
15.0
75.0
27.0
-55 to +150
Amps
Volts
µA
ns
pF
°C/W
°C
T
A
=25°C
T
A
=100°C
4/98

US1G Related Products

US1G US1J US1D US1B US1A
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

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