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2N6274E3

Description
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size120KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N6274E3 Overview

Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN

2N6274E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON

2N6274E3 Preview

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514
DEVICES
LEVELS
2N6274
2N6277
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Condition
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
@ T
C
= +25°C
@ T
C
= +100°C
(2)
Operating & Storage Temperature Range
Total Power Dissipation
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal resistance, Junction-to-Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
j
, T
stg
2N6274
100
120
6.0
20
50
2N6277
150
180
6.0
20
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
TO-3 (TO-204AE)
250
143
-65 to +200
Note:
1) Derate linearly 1.43 W/°C between T
C
= +25°C and T
C
= 200°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
(1)
Collector-Emitter Breakdown Voltage
I
C
= 50mAdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
V
CE
= 75Vdc
Collector-Emitter Cutoff Current
V
CE
= 120Vdc, V
BE
= -1.5Vdc
V
CE
= 180Vdc, V
BE
= -1.5Vdc
Collector-Base Cutoff Current
V
CB
= 120Vdc
V
CB
= 180Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
2N6274
2N6277
2N6274
2N6277
2N6274
2N6277
2N6274
2N6277
V
(BR)CEO
I
CEO
I
CEX
I
CBO
I
EBO
100
150
50
50
10
10
10
10
100
Vdc
µAdc
µAdc
µAdc
µAdc
Symbol
Min.
Max.
Unit
T4-LDS-0163 Rev. 1 (100546)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.0Adc, V
CE
= 4.0Vdc
I
C
= 20Adc, V
CE
= 4.0Vdc
I
C
= 50Adc, V
CE
= 4.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 20Adc, I
B
= 2.0Adc
I
C
= 50Adc, I
B
= 10Adc
Base-Emitter Saturation Voltage
I
C
= 20Adc, I
B
= 2.0Adc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
I
C
= 1.0Adc, V
CE
= 10Vdc, f = 10MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= 80Vdc; I
C
= 20Adc; I
B
= 2.0Adc
Turn-Off Time
V
CC
= 80Vdc ; I
C
= 20Adc; I
B1
= -I
B2
= 2.0Adc
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 5.0Vdc, I
C
= 50Adc
Test 2
V
CE
= 8.6Vdc, I
C
= 165mAdc
Test 3
V
CE
= 80Vdc, I
C
= 29mAdc
Test 4
V
CE
= 120Vdc, I
C
= 110mAdc
All Types
All Types
2N6274
2N6277
Symbol
t
on
t
off
Min.
Max.
0.5
1.05
Unit
μs
μs
Symbol
|h
fe
|
C
obo
Min.
Max.
Unit
Symbol
Min.
Max.
Unit
h
FE
50
30
10
120
V
CE(sat)
1.0
3.0
1.8
Vdc
V
BE(sat)
Vdc
3.0
12
600
pF
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle
2.0%
T4-LDS-0163 Rev. 1 (100546)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
PACKAGE DIMENSIONS
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.875
22.22
.250
.328
6.35
8.33
.495
.525
12.57
13.34
.131
.188
3.33
4.78
.060
.135
1.52
3.43
.057
.063
1.45
1.60
.312
.500
7.92
12.70
.050
1.27
.151
.161
3.84
4.09
1.177
1.197
29.90
30.40
.420
.440
10.67
11.18
.205
.225
5.21
5.72
.655
.675
16.64
17.15
Ltr
CD
CH
HR
HR1
HT
LD
LL
L
1
MHD
MHS
PS
PS
1
S
1
Notes
3
6
5, 9
4, 5, 9
5, 9
7
5
NOTE:
*
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
*
*
Dimensions are in inches.
Millimeters are given for general information only.
Body contour is optional within zone defined by CD.
These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When
gauge is not used, measurement shall be made at seating plane.
Both terminals.
At both ends.
Two holes.
Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a
.930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch
(0.15 mm) convex overall.
* FIGURE 1.
Physical dimensions (TO-3)
T4-LDS-0163 Rev. 1 (100546)
Page 3 of 3

2N6274E3 Related Products

2N6274E3 2N6277E3
Description Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
Maker Microsemi Microsemi
package instruction TO-3, 2 PIN TO-3, 2 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 50 A 50 A
Collector-emitter maximum voltage 100 V 150 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
JEDEC-95 code TO-204AE TO-204AE
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
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