AS4DDR32M72-10/XT datasheet, PDF

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AS4DDR32M72-10/XT: DescriptionDDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219; Categorystorage storage; File Size340KB，19 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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AS4DDR32M72-10/XT Overview

DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

AS4DDR32M72-10/XT Parametric

Parameter Name	Attribute value
Maker	Micross
Parts packaging code	BGA
package instruction	BGA,
Contacts	219
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.8 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B219
JESD-609 code	e4
memory density	2415919104 bit
Memory IC Type	DDR DRAM
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	219
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32MX72
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Certification status	Not Qualified
Maximum seat height	2.03 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	PALLADIUM GOLD
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM

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iPEM

2.4Gb SDRAM-DDR

AS4DDR32M72PBG

32Mx72 DDR SDRAM

iNTEGRATED Plastic Encapsulated Microcircuit

FEATURES

DDR SDRAM Data Rate = 200, 250, 266, 333Mbps

Package:

•

219 Plastic Ball Grid Array (PBGA), 32 x 25mm

2.5V ±0.2V core power supply

2.5V I/O (SSTL_2 compatible)

Differential clock inputs (CLK and CLK#)

Commands entered on each positive CLK edge

Internal pipelined double-data-rate (DDR)

architecture; two data accesses per clock cycle

Programmable Burst length: 2,4 or 8

Bidirectional data strobe (DQS) transmitted/received

with data, i.e., source-synchronous data capture

(one per byte)

DQS edge-aligned with data for READs; center-aligned

with data for WRITEs

DLL to align DQ and DQS transitions with CLK

Four internal banks for concurrent operation

Two data mask (DM) pins for masking write data

Programmable IOL/IOH option

Auto precharge option

Auto Refresh and Self Refresh Modes

Industrial, Enhanced and Military Temperature

Ranges

Organized as 32M x 72/80

Weight: AS4DDR32M72PBG </= 3.10 grams typical

* This product and or it’s speciﬁcations is subject to change without notice.

BENEFITS

40% SPACE SAVINGS

Reduced part count

Reduced I/O count

•

34% I/O Reduction

Reduced trace lengths for lower parasitic

capacitance

Suitable for hi-reliability applications

Laminate interposer for optimum TCE match

Configuration Addressing

Parameter

Configuration

Refresh Count

Row Address

Bank Address

Column Address

32 Meg x 72

8 Meg x 16 x 4 Banks

8K (A0 A12)

4 (BA0 BA1)

1K (A0 A9)

AS4DDR32M72PBG

Rev. 1.4 07/10

Micross Components reserves the right to change products or speciﬁcations without notice.

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Description	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
Maker	Micross	Micross	Micross	Micross	Micross	Micross	Micross	Micross	Micross	Micross
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	BGA,	BGA,	BGA,	BGA,	BGA,	32 X 25 MM, PLASTIC, BGA-219	BGA,	BGA,	BGA,	BGA,
Contacts	219	219	219	219	219	219	219	219	219	219
Reach Compliance Code	unknown	compliant	unknown	unknown	compliant	compliant	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.8 ns	0.8 ns	0.75 ns	0.75 ns	0.8 ns	0.7 ns	0.8 ns	0.75 ns	0.8 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219
JESD-609 code	e4	e4	e4	e4	e4	e4	e4	e4	e4	e4
memory density	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	72	72	72	72	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	219	219	219	219	219	219	219	219	219	219
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.03 mm	2.03 mm	2.03 mm	2.03 mm	2.03 mm	2.03 mm	2.03 mm	2.03 mm	2.03 mm	2.03 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal surface	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum operating temperature	125 °C	85 °C	125 °C	-	-	85 °C	125 °C	85 °C	-	85 °C
Minimum operating temperature	-55 °C	-40 °C	-55 °C	-	-	-40 °C	-55 °C	-40 °C	-	-40 °C
Temperature level	MILITARY	INDUSTRIAL	MILITARY	-	-	INDUSTRIAL	MILITARY	INDUSTRIAL	-	INDUSTRIAL

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