FP6503 datasheet, PDF - EEWORLD Datasheet

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FP6503: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size67KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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FP6503 Overview

RF AMPLIFIER MODEL

FP6503 Parametric

Parameter Name	Attribute value
Maker	API Technologies
package instruction	FP4, 4 PIN
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	15.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	5 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM 6503

Features

Low Noise Figure: 3.5 dB Typical

High Gain: + 16.5 dB Typical

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM6503, 4 Pin TO-8 (T4)

TN6503, 4 Pin Surface Mount (SM3)

FP6503, 4 Pin Flatpack (FP4)

BX6503, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ...... +22 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +16 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +14 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

Out

Noise figure (dB)

Power

Vdc

TYPICAL

Ta= 25 ºC

5 - 500 MHz

16.5

+1.5

-20

<1.75:1

<1.5:1

3.5

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

5 - 500 MHz

15.5 Min.

0.0 Min.

-18 Max.

2.0:1 Max.

4.5 Max.

+15

12 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power. ...... 50 Milliwatts (1MinuteMax.)

Maximum Peak Power .................... 0.5 Watt(3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Start 5 MHz

Stop 500 MHz

Gain (dB)

- 5

- 10

- 15

- 20

- 25

Reverse Isolation (dB)

Start 5 MHz

Stop 500 MHz

Noise Figure (dB)

Start 5 MHz

Stop 500 MHz

+ 4

+ 3

+ 2

+ 1

Start 5 MHz

1 dB Comp. (dBm)

2.0

1.5

1.0

Input VSWR

2.0

1.5

1.0

Output VSWR

Stop 500 MHz

Start 5 MHz

Stop 500 MHz

Start 5 MHz

Stop 500 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

11/12/04

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

FP6503 Related Products

	FP6503	BX6503	TM6503	TN6503
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	API Technologies	-	API Technologies
Reach Compliance Code	compli	compli	-	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	-	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	-	COMPONENT
Gain	15.5 dB	15.5 dB	-	15.5 dB
Maximum input power (CW)	13 dBm	13 dBm	-	13 dBm
Maximum operating frequency	500 MHz	500 MHz	-	500 MHz
Minimum operating frequency	5 MHz	5 MHz	-	5 MHz
Maximum operating temperature	85 °C	85 °C	-	85 °C
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	-	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	-	2

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