FP6514 datasheet, PDF - EEWORLD Datasheet

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FP6514: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size65KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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FP6514 Overview

RF AMPLIFIER MODEL

FP6514 Parametric

Parameter Name	Attribute value
Maker	API Technologies
package instruction	FP-4
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	15 dB
Maximum input power (CW)	10 dBm
Maximum operating frequency	200 MHz
Minimum operating frequency	30 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM6514

Features

Low Noise Figure:< 2.0 dB Typical

Low Supply Current: 8 mA Typical

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM6514, 4 Pin TO-8 (T4)

TN6514, 4 Pin Surface Mount (SM3)

FP6514, 4 Pin Flatpack (FP4)

BX6514, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ...... +17 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +11 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +11 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

Out

Noise figure (dB)

Power

Vdc

VSWR

TYPICAL

Ta= 25 ºC

30 - 200 MHz

16.5

>-2

-20

<1.4:1

<1.2:1

<2.0

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

30 - 200 MHz

15.0 Min.

-3.0 Min.

-18.5 Max.

2.0:1 Max.

3.0 Max.

+15

9 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power.......50 Milliwatts (1 Minute Max.)

Maximum Peak Power ................... 0.5 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Start 30 MHz

Stop 200 MHz

Gain (dB)

- 10

- 20

- 30

- 40

Reverse Isolation (dB)

Start 30 MHz

Stop 200 MHz

Noise Figure (dB)

Start 30 MHz

Stop 200 MHz

-1

-2

-3

1 dB Comp. (dBm)

2.0

1.5

1.0

Input VSWR

2.0

1.5

1.0

Output VSWR

Start 30 MHz

Stop 200 MHz

Start 30 MHz

Stop 200 MHz

Start 30 MHz

Stop 200 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

11/12/04

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

FP6514 Related Products

	FP6514	BX6514	TM6514	TN6514
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	API Technologies	API Technologies	API Technologies
Reach Compliance Code	compli	compli	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	15 dB	15 dB	15 dB	15 dB
Maximum input power (CW)	10 dBm	10 dBm	10 dBm	10 dBm
Maximum operating frequency	200 MHz	200 MHz	200 MHz	200 MHz
Minimum operating frequency	30 MHz	30 MHz	30 MHz	30 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2

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