PDM4M4040
128K x 32 CMOS
Static RAM Module
Features
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3
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Description
The PDM4M4040 is a 128K x 32 static RAM module
constructed on an epoxy laminate (FR-4) substrate
using four 128K x 8 static RAMs in plastic SOJ pack-
ages. The PDM4M4040 is available with access times
as fast as 12 ns with minimal power consumption.
The PDM4M4040 is packaged in a 64-pin FR-4 ZIP
(Zig-zag In- line vertical Package) or a 64-pin SIMM
(Single In-line Memory Module). The ZIP
configuration allows 64 pins to be placed on a
package 3.65” long and 0.21” wide. At only 0.60”
high, this low-profile package is ideal for systems
with minimum board spacing. The SIMM
configuration allows use of edge mounted sockets to
secure the module.
All inputs and outputs of the PDM4M4040 are TTL
compatible and operate from a single 5V supply. Full
asynchronous circuitry requires no clock or refresh for
operation and provides equal access and cycle times
for ease of use.
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High density 4 megabit Static RAM module
Low profile 64-pin ZIP (Zig-zag In-line vertical
Package) or 64-pin SIMM (Single In-line Memory
Module)
Fast access time: 12 ns (max.)
Surface mounted plastic components on an epoxy
laminate (FR-4) substrate
Single 5V (±10%) power supply
Multiple V
SS
pins and decoupling capacitors for
maximum noise immunity
Inputs/outputs directly TTL compatible
Functional Block Diagram
8
CS
1
CS
2
CS
3
CS
4
9
10
11
ADDRESS
17
128K x 32
RAM
WE
OE
8
8
8
8
I/O31-I/O0
12
8-35
Rev 2.2 -1/15/96
PDM4M4040
Truth Table
Mode
Deselect/
Power-down
Read
Write
Deselect
CS
OE
WE
Output
High-Z
DATA
OUT
DATA
IN
High-Z
Power
Standby
Active
Active
Active
1
2
3
H
L
L
L
X
L
X
H
X
H
L
H
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
T
A
P
T
I
OUT
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Operating Temperature
Power Dissipation
DC Output Current
Com’l.
–0.5 to +7.0
–10 to +85
–55 to +125
0 to +70
1.0
50
Ind.
–0.5 to +7.0
–10 to +85
–65 to +150
0 to +70
1.0
50
Unit
V
°C
°C
°C
W
mA
4
5
6
7
8
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Commercial
Parameter
Supply Voltage
Supply Voltage
Ambient Temperature
Min.
4.75
0
0
Typ.
5.0
0
25
Max.
5.25
0
70
Unit
V
V
°C
9
10
11
12
Rev 2..2 - 1/15/96
8-37
PDM4M4040
DC Electrical Characteristics
(V
CC
= 5.0V
±
5%, T
A
= 0°C to 70°C)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
LI
I
LI
I
LO
V
OL
V
OH
V
IH
V
IL
NOTE
Input Leakage Current
(Address
WE
, and
OE
)
Input Leakage Current
(Data and
CS
)
Output Leakage Current
Output Low Voltage
Output High Voltage
Input High Voltage
Input Low Voltage
V
CC
= Max.,V
IN
= V
SS
to V
CC
V
CC
= Max., V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
, V
CC
= Max.,
CS
= V
IH
I
OL
= 8 mA, V
CC
= Min.
I
OL
= –4 mA, V
CC
= Min.
—
—
—
—
2.4
2.2
–0.5
(1)
40
10
10
0.4
—
5.8
0.8
µA
µA
µA
V
V
V
V
1. V
IL
= –3.0V for pulse widths less than 10 ns, once per cycle.
Power Supply Characteristics
Symbol
Parameter
Max
(1)
Unit
I
CC
I
SB
I
SB1
Operating Current
CS
= V
IL
, V
CC
= Max., f = f
MAX
, Outputs Open
CS
680
160
60
mA
mA
mA
Standby Current
≥
V
IH
, V
CC
= Max., f = f
MAX
, Outputs Open
Full Standby Current
CS
≥
V
CC
– 0.2V,
f = 0, V
IN
> V
CC
– 0.2V or < 0.2V
1. Preliminary specification only.
NOTE
Capacitance
(1)
(T
A
= +25°C, f = 1.0 MHz)
Symbol
Parameter
Max.
Unit
C
IN(D)
C
IN(A)
C
OUT
NOTE
Input Capacitance, (Data and
CS
) V
IN
= 0V
Input Capacitance, (Address,
WE
, and
OE
) V
IN
= 0V
Output Capacitance, V
OUT
= 0V
12
40
12
pF
pF
pF
1. This parameter is determined by device characteristics but is not production tested.
8-38
Rev 2.2 - 1/15/96
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