HB56EW872ETK-6A datasheet, PDF

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HB56EW872ETK-6A: DescriptionEDO DRAM Module, 8MX72, 60ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168; Categorystorage storage; File Size346KB，31 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56EW872ETK-6A Overview

EDO DRAM Module, 8MX72, 60ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168

HB56EW872ETK-6A Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	603979776 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.4 mm
Maximum standby current	0.022 A
Maximum slew rate	0.92 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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HB56EW472ETC-A Series,

HB56EW872ETK-A Series

32/64MB Buffered EDO DRAM DIMM

4-Mword

72-bit, 4k Refresh, 1 Bank Module

(4 pcs of 4M

16 & 2 pcs of 4M

4 components)

8-Mword

72-bit, 4k Refresh, 2 Bank Module

(8 pcs of 4M

16 & 4 pcs of 4M

4 components)

ADE-203-844 (Z)

Preliminary, Rev. 0.0

Nov. 14, 1997

Description

The HB56EW472ETC-A, HB56EW872ETK-A belong to 8 Byte DIMM (Dual In-line Memory Module)

family, and have been developed as an optimized main memory solution for 4 and 8 Byte processor

applications. The HB56EW472ETC-A is a 4M

72 dynamic RAM module, mounted 4 pieces of 64-Mbit

DRAM (HM5165165A) sealed in TSOP package and 2 pieces of 16-Mbit DRAM (HM51W16405) sealed

in TSOP package, 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. The

HB56EW872ETK-A is a 8M

72 dynamic RAM module, mounted 8 pieces of 64-Mbit DRAM

(HM5165165A) sealed in TSOP package and 4 pieces of 16-Mbit DRAM (HM51W16405) sealed in TSOP

package, 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. They offer Extended Data Out

(EDO) Page Mode as a high speed access mode. An outline of the HB56EW472ETC-A,

HB56EW872ETK-A is 168-pin socket type package (dual lead out). Therefore, the HB56EW472ETC-A,

HB56EW872ETK-A make high density mounting possible without surface mount technology. They

provide common data inputs and outputs. Decoupling capacitors are mounted TSOP on its module board.

Features

•

168-pin socket type package (Dual lead out)



Lead pitch: 1.27 mm

•

Single 3.3 V supply: 3.3 V +0.3 V/–0.15 V (HB56EW472ETC-5AR, HB56EW872ETK-5AR)

3.3 V

0.3 V (HB56EW472ETC-6A/7A, HB56EW872ETK-6A/7A)

•

High speed



Access time: t

RAC

= 50 ns/60 ns /70 ns (max)



Access time: t

CAC

= 18 ns /20 ns /23 ns (max)

•

Low power dissipation



Active mode:

3.92 W/3.20 W/2.77 W (max) (HB56EW472ETC-A Series)

3.96 W/3.31 mW/2.88 mW (max) (HB56EW872ETK-A Series)

HB56EW872ETK-6A Related Products

	HB56EW872ETK-6A	HB56EW472ETC-6A	HB56EW472ETC-7A	HB56EW472ETC-5AR	HB56EW872ETK-5AR	HB56EW872ETK-7A
Description	EDO DRAM Module, 8MX72, 60ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168	EDO DRAM Module, 4MX72, 60ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168	EDO DRAM Module, 4MX72, 70ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168	EDO DRAM Module, 4MX72, 50ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168	EDO DRAM Module, 8MX72, 50ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168	EDO DRAM Module, 8MX72, 70ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	60 ns	70 ns	50 ns	50 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	603979776 bit	301989888 bit	301989888 bit	301989888 bit	603979776 bit	603979776 bi
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	168	168	168	168	168	168
word count	8388608 words	4194304 words	4194304 words	4194304 words	8388608 words	8388608 words
character code	8000000	4000000	4000000	4000000	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	8MX72	4MX72	4MX72	4MX72	8MX72	8MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
Maximum standby current	0.022 A	0.016 A	0.016 A	0.016 A	0.022 A	0.022 A
Maximum slew rate	0.92 mA	0.89 mA	0.77 mA	1.07 mA	1.1 mA	0.8 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3.15 V	3.15 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）

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