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MH4M08B0NJ-6

Description
Fast Page DRAM Module, 4MX8, 60ns, CMOS, SIMM-30
Categorystorage    storage   
File Size494KB,15 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

MH4M08B0NJ-6 Overview

Fast Page DRAM Module, 4MX8, 60ns, CMOS, SIMM-30

MH4M08B0NJ-6 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeSIMM
package instructionSIMM, SIM30
Contacts30
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XSMA-N30
memory density33554432 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width8
Number of functions1
Number of ports1
Number of terminals30
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeSIMM
Encapsulate equivalent codeSIM30
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height20.32 mm
Maximum standby current0.008 A
Maximum slew rate0.8 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch2.54 mm
Terminal locationSINGLE
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