7203L50D datasheet, PDF - EEWORLD Datasheet

7203L50D: DescriptionFIFO, 2KX9, 50ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size966KB，13 Pages; ManufacturerIDT (Integrated Device Technology)

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7203L50D Overview

FIFO, 2KX9, 50ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	CERAMIC, DIP-28
Contacts	28
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	50 ns
Maximum clock frequency (fCLK)	15 MHz
period time	65 ns
JESD-30 code	R-CDIP-T28
JESD-609 code	e0
memory density	18432 bit
Memory IC Type	OTHER FIFO
memory width	9
Number of functions	1
Number of terminals	28
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2KX9
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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