Silicon Controlled Rectifier, 533.8A I(T)RMS, 340000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, HERMETIC SEALED, METAL, TO-200AB, 4 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | SEMIKRON |
| Parts packaging code | BUTTON |
| package instruction | DISK BUTTON, O-MEDB-N2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| Shell connection | ISOLATED |
| Nominal circuit commutation break time | 150 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 500 V/us |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 2 V |
| Maximum holding current | 400 mA |
| JEDEC-95 code | TO-200AB |
| JESD-30 code | O-MEDB-N2 |
| JESD-609 code | e2 |
| Maximum leakage current | 40 mA |
| On-state non-repetitive peak current | 5700 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum on-state current | 340000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum rms on-state current | 533.8 A |
| Maximum repetitive peak off-state leakage current | 40000 µA |
| Off-state repetitive peak voltage | 800 V |
| Repeated peak reverse voltage | 800 V |
| surface mount | YES |
| Terminal surface | Tin/Silver (Sn/Ag) |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Trigger device type | SCR |
| SKT340/08D | SKT240/08D | SKT340/12D | SKT240/12D | |
|---|---|---|---|---|
| Description | Silicon Controlled Rectifier, 533.8A I(T)RMS, 340000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, HERMETIC SEALED, METAL, TO-200AB, 4 PIN | Silicon Controlled Rectifier, 376.8A I(T)RMS, 240000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, HERMETIC SEALED, METAL, TO-200AB, 4 PIN | Silicon Controlled Rectifier, 533.8A I(T)RMS, 340000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB | Silicon Controlled Rectifier, 376.8A I(T)RMS, 240000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB |
| Is it Rohs certified? | conform to | conform to | conform to | conform to |
| package instruction | DISK BUTTON, O-MEDB-N2 | DISK BUTTON, O-MEDB-N2 | DISK BUTTON, O-MEDB-N2 | DISK BUTTON, O-MEDB-N2 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Nominal circuit commutation break time | 150 µs | 150 µs | 150 µs | 150 µs |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Critical rise rate of minimum off-state voltage | 500 V/us | 500 V/us | 500 V/us | 500 V/us |
| Maximum DC gate trigger current | 200 mA | 200 mA | 200 mA | 200 mA |
| Maximum DC gate trigger voltage | 2 V | 2 V | 2 V | 2 V |
| Maximum holding current | 400 mA | 400 mA | 400 mA | 400 mA |
| JEDEC-95 code | TO-200AB | TO-200AB | TO-200AB | TO-200AB |
| JESD-30 code | O-MEDB-N2 | O-MEDB-N2 | O-MEDB-N2 | O-MEDB-N2 |
| JESD-609 code | e2 | e2 | e2 | e2 |
| Maximum leakage current | 40 mA | 40 mA | 40 mA | 40 mA |
| On-state non-repetitive peak current | 5700 A | 5000 A | 5700 A | 5000 A |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum on-state current | 340000 A | 240000 A | 340000 A | 240000 A |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum rms on-state current | 533.8 A | 376.8 A | 533.8 A | 376.8 A |
| Maximum repetitive peak off-state leakage current | 40000 µA | 40000 µA | 40000 µA | 40000 µA |
| Off-state repetitive peak voltage | 800 V | 800 V | 1200 V | 1200 V |
| Repeated peak reverse voltage | 800 V | 800 V | 1200 V | 1200 V |
| surface mount | YES | YES | YES | YES |
| Terminal surface | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | END | END | END | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Trigger device type | SCR | SCR | SCR | SCR |
| Is it lead-free? | Lead free | Lead free | Lead free | - |
| Maker | SEMIKRON | - | SEMIKRON | SEMIKRON |
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