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N105CH12

Description
Silicon Controlled Rectifier, 401.92A I(T)RMS, 108000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size426KB,3 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

N105CH12 Overview

Silicon Controlled Rectifier, 401.92A I(T)RMS, 108000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB

N105CH12 Parametric

Parameter NameAttribute value
MakerIXYS
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-200AB
JESD-30 codeO-CEDB-N2
Maximum leakage current20 mA
On-state non-repetitive peak current2400 A
Number of components1
Number of terminals2
Maximum on-state current108000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current401.92 A
Maximum repetitive peak off-state leakage current20000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR
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