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MBM300BS6

Description
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE
CategoryDiscrete semiconductor    The transistor   
File Size308KB,2 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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MBM300BS6 Overview

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE

MBM300BS6 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeMODULE
package instruction,
Reach Compliance Codeunknown
Other featuresHIGH SPEED, ULTRA SOFT FAST RECOVERY
Shell connectionISOLATED
Maximum collector current (IC)300 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components2
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal on time (ton)400 ns
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