DISCRETE SEMICONDUCTORS
DATA SHEET
BCX70 series
NPN general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 16
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
TYPE NUMBER
BCX70G
BCX70H
BCX70J
BCX70K
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCX70G
BCX70H
BCX70J
BCX70K
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
AG*
AH*
AJ*
AK*
Top view
BCX70 series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BCX70 series
MAX.
45
45
5
100
200
200
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
V
CEsat
V
BEsat
V
BE
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10
μA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 1 V
C
c
C
e
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector capacitance
emitter capacitance
transition frequency
noise figure
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 1 V
50
70
90
100
50
100
600
700
−
550
−
−
−
I
C
= 2 mA; V
CE
= 5 V
120
180
250
380
CONDITIONS
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 45 V; T
amb
= 150
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10
μA;
V
CE
= 5 V
−
40
30
100
MIN.
−
−
−
BCX70 series
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
520
650
780
1.7
11
250
2
MAX.
20
20
20
−
−
−
−
220
310
460
630
−
−
−
−
350
550
850
1 050
−
750
−
−
−
−
6
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz; 100
note 1
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
−
2004 Jan 16
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCX70 series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16
5
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