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UZTX550

Description
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size85KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric Compare View All

UZTX550 Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3

UZTX550 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-92
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

UZTX550 Preview

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX550
ZTX551
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-60
-45
-5
-2
-1
E-Line
TO92 Compatible
ZTX550 ZTX551
-80
-60
UNIT
V
V
V
A
A
W
mW/ °C
°C
1
5.7
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
100
15
150
ZTX550
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
-60
-45
-5
-0.1
-0.1
-0.25
-1.1
300
50
10
150
MAX. MIN.
-80
-60
-5
ZTX551
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
EB
=-4V
I
C
=-150mA,
I
B
=-15mA*
I
C
=-150mA,
I
B
=-15mA*
I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
-0.1
-0.1
-0.35
-1.1
150
µ
A
µ
A
µ
A
V
V
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
3-194
ZTX550
ZTX551
TYPICAL CHARACTERISTICS
100
h
FE
- Normalised Gain (%)
-0.8
80
60
ZTX551
V
CE(sat)
- (Volts)
-0.6
ZTX550
-0.4
I
C
/I
B
=10
-0.2
ZTX551
40
20
0
-0.01
-0.1
-1
-10
-0.001
-0.01
-0.1
-1
-10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
-1.4
-1.0
V
BE
- (Volts)
V
BE(sat)
- (Volts)
-1.2
-0.9
-1.0
-0.8
-0.8
-0.7
-0.6
-0.01
-0.1
-0.6
-1
-10
-0.01
-0.1
-1
-10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
10
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
1
ZTX550
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
0.1
0.01
0.1
1
10
100
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
ZTX551
3-195

UZTX550 Related Products

UZTX550 UZTX551
Description Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3
Is it Rohs certified? conform to conform to
Maker Diodes Incorporated Diodes Incorporated
Parts packaging code TO-92 TO-92
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Contacts 3 3
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 45 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 10
JEDEC-95 code TO-92 TO-92
JESD-30 code R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
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