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RGP15G

Description
1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size376KB,7 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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RGP15G Overview

1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

RGP15G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionO-PALF-W2
Reach Compliance Codeunknow
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
FEATURES
Glass Passivated Junction Fast Switching Rectifiers
Reverse Voltage 50 to 1000V Forward Current 1.5A
RGP15A thru RGP15MA
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* High temperature metallurgically bonded construction
* Glass passivated chip
* Capable of meeting environmental standards of MIL-S-19500
* 1.5 A operation at TA=55°C with no thermal runaway
* For use in high frequency rectifier circuits
* Fast switching for high efficiency
* Typical IR less than 0.1µA
* High temperature soldering guaranteed:
350°C/10 seconds
* 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case:
JEDEC DO-15, molded plastic over glass die
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.015 oz., 0.4g
Handling precautin:None
We declare that the material of product compliance
with ROHS requirements
1.Electrical Characteristic
Maximum & Thermal Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
device marking code
Maximum repetitive peak reverse voltage
Maximum RSM voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
= 55°C
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Maximum full load reverse current, full cycle
average,0.375"(9.5mm) lead lengths at T
A
= 55°C
Typical thermal resistance (Note 2)
Operating junction and storage temperature range
V
RRM
V
RSM
V
DC
IF(AV)
I
FSM
IR(AV)
RθJA
TJ, TSTG
RGP
15A
RGP
15B
RGP
15D
symbol
RGP
15A
RGP
15A
50
35
50
RGP
15B
RGP
15B
100
70
100
RGP
15D
RGP
15D
200
140
200
RGP
15G
RGP
15G
400
280
400
RGP
15J
RGP
15J
600
420
600
1.5
50
100
45
–50
to +150
RGP
15G
RGP
15J
1.3
5.0
100
250
25
RGP
15K
RGP
15M
RGP
15K
RGP
15K
800
560
800
RGP
15M
RGP
15M
700
1000
RGP
15MA
RGP
15MA
1000
700
1000
Unit
1000
V
V
V
A
A
µA
°C/W
°C
Electrical Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Maximum instantaneous forward voltage at 1.5A
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TA = 125°C
Typical reverse recovery time (Note 1)
Typical junction capacitance at 4.0V, 1MHz
NOTES:
1. IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
symbol
VF
IR
trr
CJ
150
RGP
15MA
Unit
V
µA
500
300
ns
PF

RGP15G Related Products

RGP15G RGP15A RGP15B RGP15D RGP15J RGP15K RGP15M RGP15MA
Description 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker LRC LRC LRC LRC LRC LRC LRC LRC
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 400 V 50 V 100 V 200 V 600 V 800 V 1000 V 1000 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.5 µs 0.5 µs 0.3 µs
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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