RGP30MA datasheet, PDF - EEWORLD Datasheet

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RGP30MA: Description3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size360KB，7 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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RGP30MA Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

RGP30MA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
Maximum non-repetitive peak forward current	125 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	3 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO

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FEATURES

Glass Passivated Junction Fast Switching Rectifiers

Reverse Voltage 50 to 1000V Forward Current

3.0A

RGP30A thru RGP30MA

* Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

* High temperature metallurgically bonded construction

* Glass passivated chip

* Capable of meeting environmental standards of MIL-S-19500

3.0

A operation at TA=55°C with no thermal runaway

* For use in high frequency rectifier circuits

* Fast switching for high efficiency

* Typical IR less than 0.1µA

* High temperature soldering guaranteed:

350°C/10 seconds

* 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

Mechanical Data

Case:

JEDEC DO-201AD, molded plastic over glass die

Terminals:

Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.038 oz.,

1.03g

Handling precautin:None

We declare that the material of product compliance

with ROHS requirements

1.Electrical Characteristic

Maximum & Thermal Characteristics Ratings

at 25°C ambient temperature unless otherwise specified.

Parameter Symbol

device marking code

Maximum repetitive peak reverse voltage

Maximum RSM voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

= 55°C

Peak forward surge current 8.3ms single half sine-

wave superimposed on rated load (JEDEC Method)

Maximum full load reverse current, full cycle

average,0.375"(9.5mm) lead lengths at T

= 55°C

Typical thermal resistance (Note 2)

Operating junction and storage temperature range

RRM

RSM

IF(AV)

FSM

IR(AV)

RθJA

TJ, TSTG

RGP

30A

RGP

30B

RGP

30D

symbol

RGP

30A

RGP

30A

RGP

30B

RGP

30B

100

RGP

30D

RGP

30D

200

140

200

RGP

30G

RGP

30G

400

280

400

RGP

30J

RGP

30J

600

420

600

3.0

125

100

–50

to +150

RGP

30G

RGP

30J

1.3

5.0

100

250

RGP

30K

RGP

30M

RGP

30K

RGP

30K

800

560

800

RGP

30M

RGP

30M

700

1000

RGP

30MA

RGP

30MA

1000

700

1000

Unit

1000

µA

°C/W

°C

Electrical Characteristics Ratings

at 25°C ambient temperature unless otherwise specified.

Parameter Symbol

Maximum instantaneous forward voltage at

3.0A

Maximum DC reverse current TA = 25°C

at rated DC blocking voltage TA = 125°C

Typical reverse recovery time (Note 1)

Typical junction capacitance at 4.0V, 1MHz

NOTES:

1. IF = 0.5A, IR = 1.0A, IRR = 0.25A

2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

symbol

trr

150

RGP

30MA

Unit

µA

500

300

RGP30MA Related Products

	RGP30MA	RGP30A	RGP30B	RGP30D	RGP30G	RGP30J	RGP30K	RGP30M
Description	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
Maximum non-repetitive peak forward current	125 A	125 A	125 A	125 A	125 A	125 A	125 A	125 A
Number of components	1	1	1	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Maximum repetitive peak reverse voltage	1000 V	50 V	100 V	200 V	400 V	600 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
package instruction	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
application	-	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
JEDEC-95 code	-	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Phase	-	1	1	1	1	1	1	1
Number of terminals	-	2	2	2	2	2	2	2
Minimum operating temperature	-	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum reverse current	-	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Maximum reverse recovery time	-	0.15 µs	0.15 µs	0.15 µs	0.15 µs	0.25 µs	0.5 µs	0.5 µs
Terminal form	-	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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