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RGP30G

Description
3 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size360KB,7 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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RGP30G Overview

3 A, SILICON, RECTIFIER DIODE

RGP30G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionO-PALF-W2
Reach Compliance Codeunknow
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
FEATURES
Glass Passivated Junction Fast Switching Rectifiers
Reverse Voltage 50 to 1000V Forward Current
3.0A
RGP30A thru RGP30MA
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* High temperature metallurgically bonded construction
* Glass passivated chip
* Capable of meeting environmental standards of MIL-S-19500
*
3.0
A operation at TA=55°C with no thermal runaway
* For use in high frequency rectifier circuits
* Fast switching for high efficiency
* Typical IR less than 0.1µA
* High temperature soldering guaranteed:
350°C/10 seconds
* 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case:
JEDEC DO-201AD, molded plastic over glass die
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.038 oz.,
1.03g
Handling precautin:None
We declare that the material of product compliance
with ROHS requirements
1.Electrical Characteristic
Maximum & Thermal Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
device marking code
Maximum repetitive peak reverse voltage
Maximum RSM voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
= 55°C
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Maximum full load reverse current, full cycle
average,0.375"(9.5mm) lead lengths at T
A
= 55°C
Typical thermal resistance (Note 2)
Operating junction and storage temperature range
V
RRM
V
RSM
V
DC
IF(AV)
I
FSM
IR(AV)
RθJA
TJ, TSTG
RGP
30A
RGP
30B
RGP
30D
symbol
RGP
30A
RGP
30A
50
35
50
RGP
30B
RGP
30B
100
70
100
RGP
30D
RGP
30D
200
140
200
RGP
30G
RGP
30G
400
280
400
RGP
30J
RGP
30J
600
420
600
3.0
125
100
20
–50
to +150
RGP
30G
RGP
30J
1.3
5.0
100
250
60
RGP
30K
RGP
30M
RGP
30K
RGP
30K
800
560
800
RGP
30M
RGP
30M
700
1000
RGP
30MA
RGP
30MA
1000
700
1000
Unit
1000
V
V
V
A
A
µA
°C/W
°C
Electrical Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Maximum instantaneous forward voltage at
3.0A
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TA = 125°C
Typical reverse recovery time (Note 1)
Typical junction capacitance at 4.0V, 1MHz
NOTES:
1. IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
symbol
VF
IR
trr
CJ
150
RGP
30MA
Unit
V
µA
500
300
ns
PF

RGP30G Related Products

RGP30G RGP30A RGP30B RGP30D RGP30J RGP30K RGP30M RGP30MA
Description 3 A, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A
Number of components 1 1 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 400 V 50 V 100 V 200 V 600 V 800 V 1000 V 1000 V
surface mount NO NO NO NO NO NO NO NO
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 -
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD -
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 -
Phase 1 1 1 1 1 1 1 -
Number of terminals 2 2 2 2 2 2 2 -
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND -
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM -
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA -
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.5 µs 0.5 µs -
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE -
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL -
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