SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - MARCH 1999
FEATURES
FCX1053A
C
*
*
*
*
*
2W POWER DISSIPATION
10A Peak Pulse Current
Excellent HFE Characteristics up to 10 Amps
Extremely Low Saturation Voltage E.g. 21mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
78m at 4.5A
Partmarking Detail -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
150
75
5
10
3
1 †
2 ‡
-55 to +150
UNIT
V
V
V
A
A
W
W
°C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
E
C
B
053
FCX1053A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
SYMBOL MIN.
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
150
150
75
150
5
TYP.
250
250
100
250
8.8
0.9
0.3
1.5
21
55
150
160
350
900
825
270
300
300
40
440
450
450
60
20
162
900
140
21
30
10
10
10
30
75
200
210
440
1000
950
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=100 A
I
C
=100 A
I
C
=10mA
I
C
=100 A, V
EB
=1V
I
E
=100 A
V
CB
=120V
V
EB
=4V
V
CES
=120V
I
C
=0.2A, I
B
=20mA*
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=100mA*
I
C
=4.5A, I
B
=200mA*
I
C
=3A, I
B
=100mA*
I
C
=3A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4.5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
1200
Transition Frequency
Output Capacitance
f
T
C
obo
MHz
pF
2%
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
t
off
ns
I
C
=2A, I
B1
=I
B2
= 20mA,
V
CC
=50V
Switching Times
t
on
ns
I
C
=2A, I
B1
=I
B2
= 20mA,
V
CC
=50V
Microcontroller MCU
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