AM80912-015 datasheet, PDF - EEWORLD Datasheet

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AM80912-015: DescriptionAVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size87KB，6 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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AM80912-015 Overview

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM80912-015 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, S-CDFM-F2
Contacts	2
Reach Compliance Code	unknow
Shell connection	BASE
Maximum collector current (IC)	1.8 A
Configuration	SINGLE
Minimum DC current gain (hFE)	15
highest frequency band	L BAND
JESD-30 code	S-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	250 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	50 W
Minimum power gain (Gp)	8.1 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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AM80912-015

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

∞

:1 VSWR CAPABILITY

LOW THERMAL RESISTANCE

INPUT MATCHING

METAL/CERAMIC HERMETIC PACKAGE

OUT

15 W MIN. WITH 8.1 dB GAIN

BANDWIDTH 255 MHz

.310 x .310 2LFL (S064)

hermetically sealed

ORDER CODE

AM80912-015

BRANDING

80912-15

PIN CONNECTION

DESCRIPTION

The AM80912-015 is designed for specialized

avionics applications, including JTIDS, where

power is provided under pulse formats utilizing

short pulse widths and high burst or overall duty

cycles.

The AM80912-015 is housed in the unique

IMPAC™ Hermetic Metal/Ceramic package with

ABSOLUTE MAXIMUM RATINGS

case

Symbol

Parameter

Value

Unit

1. Collector

2. Base

3. Emitter

4. Base

DISS

STG

Power Dissipation*(T

≤

100°C)

Device Current*

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

1.8

250

−

65 to +200

THERMAL DATA

TH(j-c)

Junction-Case Thermal Resistance*

3.0

°C/W

*Applies only to rated RF amplifier operation

March 1994

1/6

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