TN5175 datasheet, PDF - EEWORLD Datasheet

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TN5175: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size69KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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TN5175 Overview

RF AMPLIFIER MODEL

TN5175 Parametric

Parameter Name	Attribute value
Maker	API Technologies
package instruction	SM3, 4 PIN
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=23DBM
structure	COMPONENT
Gain	15.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	20 MHz
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM5175

Features

High Gain: 16.3 dB Typical

High Output Power: >+18 dB Typical

Operating Temp. - 55 ºC to +85 ºC

Environmental Screening Available

Available as:

TM5175, 4 Pin TO-8 (T4)

TN5175, 4 Pin Surface Mount (SM3)

FP5175, 4 Pin Flatpack (FP4)

BX5175, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ....... +47 dBm (Typ.)

Second Order Two Tone Intercept Point ........ +41 dBm (Typ.)

Third Order Two Tone Intercept Point ............ +32 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

Out

Noise figure (dB)

Power

Vdc

VSWR

TYPICAL

Ta= 25 ºC

20 - 500 MHz

16.3

+18

-20

<1.75:1

<3.0

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

20 - 500 MHz

16.3 +/-0.8

+16.5 Min.

-18.0 Max.

2.0:1 Max.

3.8

Max.

+15

Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power .... 100 Milliwatts (1 Minute Max.)

Maximum Peak Power ................. 0.2 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Gain (dB)

Start 20 MHz

Stop 500 MHz

Reverse Isolation (dB)

- 10

- 20

- 30

- 40

Start 20 MHz

Stop 500 MHz

Noise Figure (dB)

Start 20 MHz

Stop 500 MHz

1 dB Comp. (dBm)

+20

+19

+18

+17

+16

Start 20 MHz

Stop 500 MHz

Input VSWR

2.0

1.5

1.0

Start 20 MHz

Stop 500 MHz

Output VSWR

2.0

1.5

1.0

Start 20 MHz

Stop 500 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

01/26/05

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TN5175 Related Products

	TN5175	BX5175	FP5175	TM5175
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Reach Compliance Code	compli	compliant	compli	compli
Other features	I/P POWER-MAX (PEAK)=23DBM	I/P POWER-MAX (PEAK)=23DBM	I/P POWER-MAX (PEAK)=23DBM	I/P POWER-MAX (PEAK)=23DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	15.5 dB	15.5 dB	15.5 dB	15.5 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	500 MHz	500 MHz	500 MHz	500 MHz
Minimum operating frequency	20 MHz	20 MHz	20 MHz	20 MHz
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2
Maker	API Technologies	API Technologies	-	API Technologies

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