Preliminary
GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
119-, 165- & 209-Pin BGA
Commercial Temp
Industrial Temp
Features
1M x 18, 512K x 36, 256K x 72
18Mb S/DCD Sync Burst SRAMs
350 MHz–150 MHz
1.8 V V
DD
1.8 V I/O
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V +10%/–10% core power supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-, 165-, and 209-bump BGA package
via the FT mode . Holding the FT mode pin low places the RAM in
Flow Through mode, causing output data to bypass the Data Output
Register. Holding FT high places the RAM in Pipeline mode,
activating the rising-edge-triggered Data Output Register.
SCD and DCD Pipelined Reads
Functional Description
Applications
The GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C) is an
18,874,368-bit high performance synchronous SRAM with a 2-bit
burst address counter. Although of a type originally developed for
Level 2 Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Addresses, data I/Os, chip enable (E1), address burst control inputs
(ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
The GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C) is an
SCD (Single Cycle Deselect) and DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. DCD SRAMs pipeline disable
commands to the same degree as read commands. SCD SRAMs
pipeline deselect commands one stage less than read commands. SCD
RAMs begin turning off their outputs immediately after the deselect
command has been captured in the input registers. DCD RAMs hold
the deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte write operation is performed by using Byte Write enable (BW)
input combined with one or more individual byte write signals (Bx).
In addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Byte Write and Global Write
Controls
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low) for
multi-drop bus applications and normal drive strength (ZQ floating or
high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Core and Interface Voltages
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user
-350
t
KQ
(x18/x36)
t
KQ
(x72)
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x72)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x72)
1.8
2.0
2.85
395
455
—
4.5
4.5
270
305
—
The GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
operates on a 1.8 V power supply. All input are 1.8 V compatible.
Separate output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 1.8 V compatible.
Parameter Synopsis
-333
2.0
2.2
3.0
370
430
—
4.7
4.7
250
285
—
-300
2.2
2.5
3.3
335
390
495
5.0
5.0
230
270
345
-250
2.3
2.6
4.0
280
330
425
5.5
5.5
210
240
315
-200
2.7
2.8
5.0
230
270
345
6.5
6.5
185
205
275
-150
3.3
3.3
6.7
185
210
270
7.5
7.5
170
190
250
Unit
ns
ns
mA
mA
mA
ns
ns
mA
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.00a 6/2003
1/37
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ByteSafe is a Trademark of Giga Semiconductor, Inc. (GSI Technology).
Preliminary
GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
GS8162V72A BGA Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
DQ
E
DQ
F
DQ
G
DQ
H
B
A
, B
B
, B
C
,B
D,
B
E
, B
F
, B
G
,B
H
NC
CK
GW
E
1,
E
3
E
2
G
ADV
ADSP, ADSC
ZZ
FT
LBO
SCD
MCH
MCL
BW
ZQ
TMS
TDI
TDO
TCK
V
DD
V
SS
V
DDQ
I
I
I
I
O
I
I
I
I
Type
I
I
Description
Address field LSBs and Address Counter Preset Inputs.
Address Inputs
I/O
Data Input and Output pins
I
—
I
I
I
I
I
I
I
I
I
I
I
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D,
DQ
E
,
DQ
F
, DQ
G
, DQ
H
I/Os; active low
No Connect
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Single Cycle Deselect/Dual Cycle Deselect Mode Control
Must Connect High
Must Connect Low
Byte Enable; active low
FLXDrive Output Impedance Control
(Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 1.00a 6/2003
3/37
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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