S29GL-M MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 µm MirrorBit Process Technology
Data Sheet
This product family has been retired and is not recommended for designs. For
new and current designs, S29GL032A, S29GL064A, S29GL128P, and
S29GL256P supersede S29GL032M, S29GL064M, S29GL128M, and
S29GL256M respectively. These are the factory-recommended migration
paths. Please refer to the S29GL-A and S29GL-P Datasheets for specifications
and ordering information. Availability of this document is retained for reference
and historical purposes only.
Notice to Readers:
This document states the current technical specifications
regarding the Spansion product(s) described herein. Spansion Inc. deems the
products to have been in sufficient production volume such that subsequent
versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered
may occur.
Publication Number
S29GL-M_00
Revision
B
Amendment
8
Issue Date
February 7, 2007
D a t a
S h e e t
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, in-
cluding development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to high-
light their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more
specific products, but has not committed any design to production. Information presented in a
document with this designation is likely to change, and in some cases, development on the prod-
uct may discontinue. Spansion Inc. therefore places the following conditions upon Advance Infor-
mation content:
“This document contains information on one or more products under development at Spansion Inc. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or V
IO
range. Changes
may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion Inc. applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion Inc. deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
ii
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B8 February 7, 2007
S29GL-M MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 µm MirrorBit Process Technology
Data Sheet
This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A,
S29GL064A, S29GL128P, and S29GL256P supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M respectively.
These are the factory-recommended migration paths. Please refer to the S29GL-A and S29GL-P Datasheets for specifications
and ordering information. Availability of this document is retained for reference and historical purposes only.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256 Mb: 512 32-Kword (64 Kbyte) sectors
— 128 Mb: 256 32-Kword (64 Kbyte) sectors
— 64 Mb (uniform sector models): 128 32-Kword
(64-Kbyte) sectors or 128 32 Kword sectors
— 64 Mb (boot sector models): 127 32-Kword
(64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
— 32 Mb (uniform sector models): 64 32-Kword
(64-Kbyte) sectors of 64 32-Kword sectors
— 32 Mb (boot sector models): 63 32-Kword (64 Kbyte)
sectors + 8 4-Kword (8-Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V,
5 MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Performance Characteristics
High performance
— 90 ns access time (128 Mb, 64 Mb, 32 Mb),
100 ns access time (256 Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
— 30 ns page read times (256 Mb)
— 16-word/32-byte write buffer
Publication Number
S29GL-M_00
Revision
B
Amendment
8
Issue Date
February 7, 2007
D a t a
S h e e t
General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufac-
tured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216
words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or
16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes.
The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the
model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit
wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices
can be programmed either in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns (S29GL256M) are
available. Note that each access time has a specific operating voltage range (V
CC
) as specified in
Product Selector Guide
and the
Ordering Information
sections starting on
page 16.
Package offer-
ings include 40-pin TSOP, 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA, 63-ball fine-pitch BGA
and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable
(CE#), write enable (WE#) and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and write functions. In
addition to a V
CC
input, a high-voltage
accelerated program (ACC)
feature provides shorter pro-
gramming times through increased current on the WP#/ACC input. This feature is intended to
facilitate factory throughput during system production, but may also be used in the field if desired.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash stan-
dard.
Commands are written to the device using standard microprocessor write timing. Write cycles
also internally latch addresses and data needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
Device programming and erasure are initiated through command sequences. Once a program or
erase operation starts, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle)
sta-
tus bits
or monitor the
Ready/Busy# (RY/BY#)
output to determine whether the operation is
complete. To facilitate programming, an
Unlock Bypass
mode reduces command sequence over-
head by requiring only two write cycles to program data instead of four.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write
operations during power transitions. The hardware sector protection feature disables both program
and erase operations in any combination of sectors of memory. This can be achieved in-system or
via programming equipment.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an erase operation
in a given sector to read or program any other sector and then complete the erase operation. The
Program Suspend/Program Resume
feature enables the host system to pause a program op-
eration in a given sector to read any other sector and then complete the program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the device, after
which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry.
A system reset would thus also reset the device, enabling the host system to read boot-up firmware
from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage levels
on CE# and RESET#, or when addresses are stable for a specified period of time.
The
Write Protect (WP#)
feature protects the first or last sector by asserting a logic low on the
WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected even
during accelerated programming.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can be per-
manently protected. Once this sector is protected, no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to
produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases
all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using
hot electron injection.
2
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B8 February 7, 2007
D a t a
S h e e t
Table of Contents
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .6
For S29GL064M (model R0) only ....................................................................7
For S29GL064M (model R0) only .................................................................. 10
For S29GL032M (model R0) only .................................................................. 12
Unprotection Address Table ................................................. 49
Table 23. S29GL064M (Models R1, R2, R8, R9) Sector Group
Protection/Unprotection Addresses ....................................... 49
Table 24. S29GL064M (Model R3) Sector Group Protection/
Unprotection Address Table ................................................. 50
Table 26. S29GL064M (Model R5) Sector Group Protection/
Unprotection Addresses ...................................................... 51
Table 27. S29GL064M (Models R6, R7) Sector Group Protection/
Unprotection Address ......................................................... 51
Table 28. S29GL128M Sector Group Protection/Unprotection
Addresses ......................................................................... 51
Table 29. S29GL256M Sector Group Protection/Unprotection
Addresses ......................................................................... 52
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Logic Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
S29GL064M (Models R1, R2, R8, R9) ............................................................ 14
S29GL064M (Models R3, R4) .......................................................................... 14
S29GL064M (Model R5) .....................................................................................15
S29GL064M (Model R6, R7) .............................................................................15
S29GL128M .............................................................................................................15
Temporary Sector Group Unprotect .......................................................... 53
Figure 1. Temporary Sector Group Unprotect Operation.......... 53
Figure 2. In-System Sector Group Protect/Sector Group Unprotect
Algorithms........................................................................ 54
Ordering Information: S29GL032M . . . . . . . . . . . . 16
S29GL032M Standard Products ...................................................................... 16
Table 1. S29GL032M Ordering Options ................................. 17
Ordering Information: S29GL064M . . . . . . . . . . . 18
S29GL064M Standard Products ...................................................................... 18
Table 2. S29GL064M Ordering Options ................................. 19
Ordering Information: S29GL128M . . . . . . . . . . . .20
Table 3. S29GL128M Ordering Options ................................. 20
Secured Silicon Sector Flash Memory Region ........................................... 55
Write Protect (WP#) ....................................................................................... 56
Hardware Data Protection ............................................................................. 56
Low VCC Write Inhibit ................................................................................ 56
Write Pulse “Glitch” Protection ............................................................... 56
Logical Inhibit ................................................................................................... 56
Power-Up Write Inhibit ............................................................................... 56
Common Flash Memory Interface (CFI) . . . . . . . 57
Table 30. CFI Query Identification String .............................. 57
Table 31. System Interface String ........................................ 57
Table 32. Device Geometry Definition ................................... 58
Table 33. Primary Vendor-Specific Extended Query ................ 59
Ordering Information: S29GL256M . . . . . . . . . . . . 21
Table 4. S29GL256M Ordering Options ................................. 21
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 22
Table 5. Device Bus Operations ........................................... 22
Word/Byte Configuration ............................................................................... 22
Requirements for Reading Array Data ........................................................ 22
Page Mode Read ..................................................................................................23
Writing Commands/Command Sequences .................................................23
Write Buffer .....................................................................................................23
Accelerated Program Operation ...............................................................23
Autoselect Functions .....................................................................................23
Standby Mode ...................................................................................................... 24
Automatic Sleep Mode ..................................................................................... 24
RESET#: Hardware Reset Pin ........................................................................ 24
Output Disable Mode ....................................................................................... 24
Table 6. S29GL032M (Model R0) Sector Addresses ................ 25
Table 7. S29GL032M (Models R1, R2) Sector Addresses ......... 26
Table 8. S29GL032M (Model R3)
Top Boot Sector Addresses ................................................. 27
Table 9. S29GL032M (Model R4)
Bottom Boot Sector Addresses ............................................ 28
Table 11. S29GL064M (Models R1, R2, R8, R9)
Sector Addresses .............................................................. 30
Table 14. S29GL064M (Model R5, R6, R7) Sector Addresses ... 37
Table 16. S29GL256M Sector Address Table ......................... 41
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 60
Reading Array Data ...........................................................................................60
Reset Command .................................................................................................60
Autoselect Command Sequence .....................................................................61
Enter/Exit Secured Silicon Sector Command Sequence ..........................61
Word Program Command Sequence .......................................................61
Unlock Bypass Command Sequence ........................................................ 62
Write Buffer Programming .......................................................................... 62
Accelerated Program .................................................................................... 63
Figure 3. Write Buffer Programming Operation ...................... 64
Figure 4. Program Operation ............................................... 65
Program Suspend/Program Resume Command Sequence .................... 65
Figure 5. Program Suspend/Program Resume........................ 66
Chip Erase Command Sequence ...................................................................66
Sector Erase Command Sequence ................................................................66
Figure 6. Erase Operation ................................................... 67
Erase Suspend/Erase Resume Commands ..................................................68
Command Definitions .......................................................................................69
Write Operation Status .................................................................................... 71
DQ7: Data# Polling ............................................................................................. 71
Table 34. Command Definitions( x16 Mode, BYTE# = V
IH
) ...... 69
Table 35. Command Definitions (x8 Mode, BYTE# = V
IL
) ........ 70
Autoselect Mode .................................................................................................47
Table 17. Autoselect Codes, (High Voltage Method) ............... 47
Table 18. S29GL032M (Model R0) Sector Group Protection/
Unprotection Addresses ...................................................... 48
Table 19. S29GL032M (Models R1, R2) Sector Group Protection/
Unprotection Addresses ...................................................... 48
Table 20. S29GL032M (Model R3) Sector Group Protection/
Unprotection Address Table ................................................ 48
Table 21. S29GL032M (Model R4) Sector Group Protection/
Unprotection Address Table ................................................ 49
Table 22. S29GL064M (Model 00) Sector Group Protection/
Figure 7. Data# Polling Algorithm ........................................ 72
RY/BY#: Ready/Busy# ....................................................................................... 72
DQ6: Toggle Bit I ............................................................................................... 72
Figure 8. Toggle Bit Algorithm ............................................. 74
DQ2: Toggle Bit II .............................................................................................. 74
DQ5: Exceeded Timing Limits ........................................................................ 75
DQ3: Sector Erase Timer ................................................................................ 75
DQ1: Write-to-Buffer Abort ........................................................................... 75
Table 36. Write Operation Status ......................................... 76
February 7, 2007 S29GL-M_00_B8
S29GL-M MirrorBit
TM
Flash Family
3
NXP MCU
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