Transient Voltage Suppressors Array for ESD Protection
ESDXXV08S-4L Series
Description
The ESDXXV08S-4L is in an SO-08 package and may be used
to protect two high-speed line pairs. The
“flow-thru”
design
minimizes trace inductance and reduces voltage overshoot
associated with ESD events. The low clamping voltage of the
ESDXXV08S-4L minimizes the stress on the protected IC.
Low Capacitance
SO-08
Feature
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500 Watts Peak Pulse Power per Line (tp=8/20μs)
Protects Four High Speed I/O lines
Low capacitance (5pF) for high-speed interfaces
Low clamping and operating voltage
RoHS Compliant
IEC61000-4-2 (ESD)
±15kV
(air),
±8kV
(contact)
IEC61000-4-4 (EFT) 40A (5/50ηs)
IEC61000-4-5 (Lightning) 24A (8/20μs)
Functional Diagram
Applications
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USB Power and Data Line Protection
T1/E1 secondary IC Side Protection
T3/E3 secondary IC Side Protection
HDSL, SDSL secondary IC Side Protection
Video Line Protection
Microcontroller Input Protection
Base stations
I C Bus Protection
2
Mechanical Characteristics
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JEDEC SO-08 Package
Molding Compound Flammability Rating : UL 94V-0
Weight 70 Milligrams (Approximate)
Quantity Per Reel : 2,500pcs
Reel Size : 13 inch
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
P
PP
T
L
T
STG
T
J
Parameter
Peak Pulse Power (tp=8/20μs waveform)
Lead Soldering Temperature
Storage Temperature Range
Operating Temperature Range
IEC61000-4-2 (ESD)
Air Discharge
Contact Discharge
IEC61000-4-4 (EFT)
IEC61000-4-5 ( Lightning )
Value
500
260 (10sec)
-55 to +150
-55 to +150
±15
±8
40
24
Units
W
ºC
ºC
ºC
KV
A
A
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
www.unsemi.com.tw
1/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
ESDXXV08S-4L Series
Electrical Characteristics
(@ 25℃ Unless Otherwise Specified )
Device
Marking
SRDA
3.3-4
SRDA
05-4
SRDA
12-4
SRDA
15-4
V
RWM
(V)
(Max.)
3.3
5
12
15
V
B
(V)
(Min.)
4
6
13.3
16.7
I
T
(mA)
1
1
1
1
V
C
@5A
(Max.)
6.5
9.8
19
24
V
C
(Max.)
15.5
19
29
32
(@A)
27
24
18
15
Low Capacitance
Part Number
I
R
(μA)
(Max.)
40
5
1
1
C
(pF)
(Typ.)
5
5
5
5
ESD3.3V08S-4L
ESD05V08S-4L
ESD12V08S-4L
ESD15V08S-4L
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
Percent of Peak Pulse Current %
90%
120
I
PP
- Peak Pulse Current - % of I
PP
100
80
60
40
t
d
=t I
PP
/2
20
0
0
5
10
15
t - Time (μs)
20
25
30
t
r
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
r
=8μs
t
d
=20μs
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
Fig3.
Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Ambient Temperature
–
T
A
(ºC)
% of Rated Power or I
PP
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
ESDXXV08S-4L Series
Characteristic Curves
Fig4.
ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig5.
Low Capacitance
ESD Clamping (-8KV Contac per IEC61000-4-2)
SO-08 Package Outline & Dimensions
Millimeters
Min
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.35
Max
5.00
4.00
1.75
0.51
Inches
Min
0.189
0.150
0.053
0.013
Max
0.197
0.157
0.069
0.020
DIM
1.27BSC
0.10
0.19
0.40
0°
0.25
5.80
0.25
0.25
1.27
8°
0.50
6.20
0.050BSC
0.004
0.007
0.016
0°
0.010
0.228
0.010
0.010
0.050
8°
0.020
0.244
Soldering Footprint
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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