STC4250L
NPN Silicon Transistor
Applications
•
Power amplifier application
•
High current switching application
PIN Connection
Features
•
High current : I
C
=2A
•
Complementary pair with STA3250L
TO -92L
1: Emitter 2 :Collector
3: Base
Ordering Information
Type NO.
STC4250L
Marking
STC4250
YWW
HW2: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
Package Code
TO-92L
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
[Ta=25℃]
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Rating
50
50
5
2
0.4
1
2
150
-55~150
Unit
V
V
V
A
A
W
W
°C
°C
Collector Power dissipation
P
C
※
Junction temperature
Storage temperature range
T
J
T
stg
※
Device mounted on ceramic substrate (250mm
2
ⅹ0.8t)
KSD-T0D013-000
1
STC4250L
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
[Ta=25℃]
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
Test Condition
I
C
=10mA, I
B
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=0.5A
*
V
CE
=2V, I
C
=1.5A
*
I
C
=1A, I
B
=0.05A
*
I
C
=1A, I
B
=0.05A
*
V
CE
=2V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
50
-
-
120
40
-
-
-
-
-
-
-
-
-
-
-
-
-
240
15
100
300
50
-
0.1
0.1
240
-
0.35
1.2
-
-
-
-
-
Unit
V
μA
μA
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
<
V
V
MHz
pF
nS
-
*:
Pulse test: t
P
≤300µs,
Duty cycle≤2%
KSD-T0D013-000
2
STC4250L
Electrical Characteristic Curves
Fig. 1 P
C
- T
a
Fig. 2 I
C
- V
BE
Fig. 3 I
C
- V
CE
Fig. 4 h
FE
- I
C
Fig. 5 V
CE(sat)
- I
C
Fig. 6 V
BE(sat)
- I
C
KSD-T0D013-000
3
STC4250L
Electrical Characteristic Curves
Fig. 7 C
Ob
- V
CB
Fig. 8 Safe Operating Area
*
*
*
KSD-T0D013-000
4
STC4250L
Outline Dimension(mm)
KSD-T0D013-000
5
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