These P-Channel 2.5V specified MOSFETs are produced
using a rugged gate version of Fairchild's advanced
PowerTrench
TM
process. It has been optimized for
power management applications which require a wide
range of gate drive voltages.
Features
-5.5 A, 20 V. R
DS(ON)
= 0.040
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.050
Ω
@ V
GS
= 2.5 V
Extended V
GSS
range (
±12V)
for battery applications.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
Load switch
Battery protection
Power management
D2
D1
D1
S2
G2
D2
5
6
7
8
4
3
2
1
SO-8
Symbol
V
DSS
V
GSS
I
D
P
D
G1
S1
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±12
(Note 1a)
Units
V
V
A
W
5.5
50
2.0
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
-55 to +150
°C
T
J
, T
stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6815
1999
Fairchild Semiconductor Corporation
Device
FDS6815
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
FDS6815 Rev. A
FDS6815
Electrical Characteristics
Symbol
Parameter
T
A
=25
o
C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
(Note 2)
V
GS
= 0 V, I
D
= -250
µA
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= -12 V, V
DS
= 0 V
-20
1
100
-100
V
µA
nA
nA
ON CHARACTERISTICS
V
GS(TH)
R
DS(ON)
I
D(ON)
Static Drain-Source
On-Resistance
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
µA
V
GS
= -4.5 V, I
D
= -5.5 A
V
GS
= -2.5 V, I
D
= -5 A
V
GS
= -4.5 V, V
DS
= -5.0 V
-0.6
-1.5
0.04
0.05
V
Ω
A
On-State Drain Current
25
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-1.3
-1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design. Thermal rating based on independent single device operation.
a) 78° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS6815 Rev. A
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration:
Figure 1.0
N
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________ gms
MAX _____________ gms
ESD Label
Antistatic Cover Tape
Conductive Embossed
Carrier Tape
F63TNR
Label
Customized
Label
Pin 1
F852
831N
F852
831N
SOIC-8 Unit Orientation
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
2,500
13” Dia
343x64x343
5,000
0.0774
0.6060
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
S62Z
Bag
200
-
76x102x127
1,000
0.0774
-
Bulk
D84Z
TNR
500
7” Dia
184x187x47
2,500
0.0774
0.1182
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
QTY: 2500
SPEC:
F852
831N
F852
831N
F63TNLabel
F63TNLabel
ESD Label
QARV:
(F63TNR)2
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Trailer Tape
160mm minimum
Components
Leader Tape
390mm minimum
November 1998, Rev. A
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration:
Figure 3.0
T
E1
P0
D0
F
K0
Wc
B0
E2
W
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOIC(8lds)
(12mm)
A0
6.50
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0
1.55
+/-0.05
D1
1.60
+/-0.10
E1
1.75
+/-0.10
E2
10.25
min
F
5.50
+/-0.05
P1
8.0
+/-0.1
P0
4.0
+/-0.1
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
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